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Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering

机译：通过超薄SiO2 / GeO2双层钝化用高质量接口的Ge-MOS电容器的制造与随后的SiO2沉积相结合使用磁控溅射

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Kana Hirayama; Keisuke Yoshino; Ryuji Ueno; Yoshiaki Iwamura; Haigui Yang; Dong Wang; Hiroshi Nakashima;
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年度 2011
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1. Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO_2/GeO_2 bi-layer passivation combined with the subsequent SiO_2-depositions using magnetron sputtering [J] . Kana Hirayama, Keisuke Yoshino, Ryuji Ueno, Solid-State Electronics . 2011,第1期

机译：超薄SiO_2 / GeO_2双层钝化结合随后的磁控溅射SiO_2沉积法制造具有高质量界面的Ge-MOS电容器
2. An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation [J] . Wang Dong, Kojima Shuta, Sakamoto Keita, Journal of Applied Physics . 2012,第8期

机译：SiO2 / GeO2双层钝化的Ge金属-绝缘体-半导体电容器的深层瞬态光谱法精确表征界面态
3. Optimisation of bi-layer resist overhang structure formation and SiO2 sputter-deposition process for fabrication of gold multi-electrode array [J] . Kim Y. H., Kim G. H., Kim A. -Y., RSC Advances . 2015,第9期

机译：双层抗蚀剂悬垂结构形成和SiO2溅射沉积工艺在金多电极阵列制造中的优化
4. High surface passivation quality and thermal stability of ALD Al2O3 on wet chemical grown ultra-thin SiO2 on silicon [C] . Stefan Bordihn, Peter Engelhart, Verena Mertens International Conference on Crystalline Photovoltaics . 2011

机译：硅湿化学种植超薄SiO2上的ALD AL2O3的高表面钝化质量和热稳定性
5. Structured ZnO-based contacts deposited by non-reactive rf magnetron sputtering on ultra-thin SiO2/Si through a stencil mask [O] . Barnabé Antoine, Lalanne Maëva, Presmanes Lionel, 2009

机译：非反应性射频磁控溅射通过模板掩模在超薄SiO2 / Si上沉积的结构化ZnO基触点

Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering

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