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Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain

机译：基于纳米结构肖特基排水的高反向阻断电压的单向GAN-on-SI MOSHEM

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Jun Ma; Elison Matioli;
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1. 900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain [J] . Jun Ma, Minghua Zhu, Elison Matioli Electron Device Letters, IEEE . 2017,第12期

机译：具有混合三阳极肖特基漏极的900 V反向阻挡GaN-on-Si MOSHEMT
2. Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts [J] . Taube Andrzej, Kaczmarski Jakub, Kruszka Renata, Solid-State Electronics . 2015,第sepa期

机译：具有肖特基和欧姆漏极触点的高压AlGaN / Si on GaN HEMT的随温度变化的电特性
3. Positive Threshold-Voltage Shift of Y_2O_3 Gate Dielectric InAlN/GaN-on-Si (111) MOSHEMTs with Respect to HEMTs [J] . M. K. Bera, Y. Liu, L. M. Kyaw ECS Journal of Solid State Science and Technology . 2014,第6期

机译：Y_2O_3栅极电介质InAlN / Si-Si上的GaN（111）MOSHEMT的正阈值电压漂移相对于HEMT
4. Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain [C] . Jun Ma, Elison Matioli International Symposium on Power Semiconductor Devices and IC's . 2018

机译：基于纳米肖特基漏极的具有高反向阻断电压的单向GaN-on-Si MOSHEMT
5. Advanced Source Injector for N-type Enhancement-Mode Gallium Nitride-based Schottky Barrier MOSFET with Source/Drain Extension [D] . Park, Jaehoon 2010

机译：用于具有源/漏扩展的N型增强型氮化镓基肖特基势垒MOSFET的高级源极注入器
6. Mobility Models Based on Forward Current-Voltage Characteristics of P-type Pseudo-Vertical Diamond Schottky Barrier Diodes [O] . Min-Woo Ha, Ogyun Seok, Hojun Lee, 2020

机译：基于P型伪垂直金刚石肖特基势垒二极管正向电流-电压特性的迁移模型
7. InAlN/GaN MOSHEMTs with high drain current of 2.3 A/mm high on/off ratio of 1012 and low SS of 64 mV/dec enabled by atomic-layer-epitaxial MgCaO as gate dielectric [O] . Hong Zhou, Xiabing Lou, Heng Wu, 2015

机译：INALN / GAN MOSHEMT的漏极电流为2.3 A / mm高/截止比率为10 12 和64 mV / sup的低SS，由原子层外延Mgcao作为栅极电介质使能

Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain

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