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A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization

机译:坚固性改进的移动射频功率放大器模块,通过软件定义雾化具有动态阻抗校正

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摘要

A ruggedness improved multi-band radio frequency (RF) power amplifier (PA) module applicable to mobile handsets, which are required to survive against a serious load impedance change under extreme power and bias conditions, is presented. In this method, the load impedance of PA is adaptively adjusted with a digitally controlled impedance corrector to keep the PA safe by performing a load mismatch detection. The impedance mismatch detector, impedance corrector, and other RF switches were all integrated into a single integrated circuit (IC) using silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS). For the verification purpose, a 2-stage hetero junction bipolar transistor (HBT) PA module adopting this method was fabricated. At a frequency of 1915 MHz, a collector bias voltage of 4.2 V, and over a wider range of load impedance variation between a VSWR of 1 and a VSWR of 5.5, it did not fail. When this technique was not applied with a voltage standing wave ratio (VSWR) range of 1 to 4, it resulted in an acceptable RF performance degradation of 1% power added efficiency (PAE) in envelope tracking (ET) mode. Moreover, it survived at a bias voltage 1V larger than when the technique was not applied for the same mismatch condition.
机译:提出了一种适用于移动手机的坚固性改进的多频带射频(RF)功率放大器(PA)模块,其在极端功率和偏置条件下需要抵抗严重的负载阻抗变化。在该方法中,PA的负载阻抗通过数字控制的阻抗校正器自适应地调节,以通过执行负载失配检测来保持PA安全。阻抗失配检测器,阻抗校正器和其他RF开关全部在绝缘体上使用硅(SOI)互补金属氧化物半导体(CMOS)集成到单个集成电路(IC)中。为了验证目的,制造了采用该方法的2级杂连接双极晶体管(HBT)PA模块。在1915 MHz的频率下,收集器偏置电压为4.2V,并且在VSWR为5.5的VSWR之间的更宽的负载阻抗变化范围内,它没有失败。当该技术不施加具有1至4的电压驻波比(VSWR)范围内,导致包络跟踪(ET)模式中的1%功率添加效率(PAE)的可接受的RF性能降低。此外,它以大于该技术不应用于相同的不匹配条件的偏置电压1V施存。

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