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Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier Diodes

机译：影响3C-SIC-on-SI肖特基屏障二极管性能的陷阱实验研究与验证

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A. Arvanitopoulos; F. Li; M. R. Jennings; S. Perkins; K. N. Gyftakis; M. Antoniou; Phil Mawby; N. Lophitis;
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年度 2019
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1. A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes [J] . Arvanitopoulos Anastasios E., Antoniou Marina, Jennings Mike R., Emerging and Selected Topics in Power Electronics, IEEE Journal of . 2020,第1期

机译：3C-SIC-on-Si-Si-Schottky屏障二极管中屏障高度行为的基于缺陷的模型
2. An Investigation on Barrier Inhomogeneities of 4H-SiC Schottky Barrier Diodes Induced by Surface Morphology and Traps [J] . Lee K.-Y., Huang Y.-H. Electron Devices, IEEE Transactions on . 2012,第3期

机译：表面形貌和陷阱引起的4H-SiC肖特基势垒二极管势垒不均匀性的研究
3. Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes [J] . Min Seong-Ji, Schweitz Michael A., Nguyen Ngoc Thi, Journal of nanoscience and nanotechnology . 2021,第3期

机译：4H-SiC肖特基势垒二极管，结屏障肖特基二极管和引脚二极管的温度传感性能比较
4. Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier Diodes [C] . A. Arvanitopoulos, F. Li, M. R. Jennings, IEEE Energy Conversion Congress and Exposition . 2019

机译：影响3C-SIC-on-SI肖特基屏障二极管性能的陷阱实验研究与验证
5. THE EFFECTS OF TRAPS ON THE CAPACITANCE OF SELENIUM SCHOTTKY BARRIER DIODES [D] . KRAMBECK, ROBERT H. -1

机译：陷阱对硒肖特基势垒二极管电容的影响
6. Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction [O] . Tao Sun, Xiaorong Luo, Jie Wei, -1

机译：双异质结硅衬底上AlGaN / GaN肖特基势垒二极管的理论和实验研究
7. Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes [O] . Arslan, E., Bütün, S., Şafak, Y., 2011

机译：（Ni / Au）-AlN / GaN肖特基势垒二极管中的电流传输机制和陷阱态研究

Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier Diodes

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