Growth of Single Crystal InSb by Floating Zone Method

机译：通过浮区法生长单晶INSB

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Isao Nakatani; Katashi Masumoto; Satoshi Takahashi; Isao Nishida; Teruo Kiyosawa; Nobuyuki Koguchi;
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1. Gravitational sensitivity of Melts at the Growth of InSb: Te Crystals By the Bridgman and floating Zone Methods under the conditions of Microgravity [J] . V. S. Zemskov, M. R. Raukhman, V. P. Shalimov Космические исследования . 2001,第4期

机译：微重力条件下Bridgman法和浮区法研究InSb：Te晶体生长过程中熔体的重力敏感性
2. The Synthesis of Vanadium-Doped Forsterite by the H2O2-Assisted Son-Gel Method, and the Growth of Single Crystals of Vanadium-Doped Forsterite by the Floating Zone Method [J] . Dong Gon Park, James M. Burlitch, Mikio Higuchi, Bulletin of the Korean Chemical Society . 1998,第9期

机译：H2O2辅助Son-Gel法合成钒掺杂的镁橄榄石，浮区法生长钒掺杂的镁橄榄石单晶
3. Crystal Growth Technique and New Development by Floating Zone Method for Functional Oxide Single Crystals [J] . Isao TANAKA Journal of the Technical Association of Refractories . 2013,第1期

机译：功能性氧化物单晶的晶体生长技术和浮区法新进展
4. EFFECTS OF VARIABLE MICROACCELERATIONS IN DISTRIBUTION OF IMPURITY INHOMOGENEITIES IN THE InSb:Te SINGLE CRYSTALS GROWN BY CRUCIBLELESS FLOATING ZONE MELTING ON THE 'FOTON' SATELLITE [C] . I.V. Barmin, A.V. Egorov, M.R. Raukhman, 55th International Astronautical Congress 2004 vol.8 . 2004

机译：微裂纹对在“福腾”卫星上无坩埚漂浮区熔化生长的InSb：Te单晶中杂质不均一性的影响
5. Optical Properties of Rare-Earth-Doped Y3Al5O12 Single-Crystals Grown by a Floating Zone Method and Transparent Ceramics [D] . 関田, 正實 1993

机译：浮区法生长的掺稀土Y3Al5O12单晶和透明陶瓷的光学性质
6. Floating Zone Growth and Characterization of (Ca1–xNdx)12Al14O33+6x (x ∼0.001) Single Crystals [O] . M. Mozahar Ali, Masanori Nagao, Satoshi Watauchi, 2017

机译：（Ca1-xNdx）12Al14O33 + 6x（x〜0.001）单晶
7. Growth of layered Lu2Fe3O7 and Lu3Fe4O10 single crystals exhibiting long-range charge order via the optical floating-zone method [O] . S.S. Hammouda, M. Angst 2019

机译：分层LU2FE3O7和LU3FE4O10的生长通过光学浮区法表现出远程充电顺序的单晶
8. Growth of semiconductor compound single crystal InSb by floating zone method (M-3) [R] . Nakatani, I. 1993

机译：浮区法（m-3）生长半导体化合物单晶Insb

Growth of Single Crystal InSb by Floating Zone Method

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