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Evidence of defect band mechanism responsible for band gap evolution in (ZnO)1−x(GaN)x alloys

机译：负责（ZnO）1-x（GaN）X合金的带隙演化的缺陷带机制的证据

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V. S. Olsen; G. Baldissera; C. Zimmermann; C. S. Granerød; C. Bazioti; A. Galeckas; B. G. Svensson; A. Yu. Kuznetsov; C. Persson; Ø. Prytz; L. Vines;
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1. Evidence of defect band mechanism responsible for band gap evolution in (ZnO)_(1-x)(GaN)_x alloys [J] . Olsen V. S., Baldissera G., Zimmermann C., Physical review . 2019,第16期

机译：负责（ZnO）_（1-x）（GaN）_x合金的带隙演化的缺陷带机制的证据
2. Evidence of defect band mechanism responsible for band gap evolution in (ZnO)(1-x)(GaN)(x) alloys [J] . Olsen V. S., Baldissera G., Zimmermann C., Physical review, B . 2019,第16期

机译：缺陷带机制的证据负责（ZnO）（1-X）（GaN）（X）合金的带隙演化
3. Comment on 'Experimental evidence for N-induced strong coupling of host conduction band states in GaN_xP_(1-x): Insight into the dominant mechanism for giant band-gap bowing' [J] . B. Fluegel, Yong Zhang, J. F. Geisz, Physical review. B, Condensed Matter And Materials Physics . 2005,第19期

机译：评论“ N诱导GaN_xP_（1-x）中主体导带状态的强耦合的实验证据：洞悉巨大带隙弯曲的主要机理”
4. Evolution Of The Band Gaps And Band Edges Of Quaternary Ga_(1–y)InyAsxSb_(1–x)/InAs Alloys As A Function of Composition [C] . Rita Magri, Alex Zunger, H. Kroemer International Conference on the Physics of Semiconductors . 2005

机译：作为组成的函数的季氧化物Ga_（1-y）inyasxsb_（1-x）/ Inas合金的带空隙和带边的演变
5. Band gaps by design: Tailoring ZnO based semiconductor alloy films [D] . Che, Hui 2014

机译：乐队设计态度：剪裁ZnO基半导体合金薄膜
6. Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration [O] . Timothy D. Eales, Igor P. Marko, Stefan Schulz, -1

机译：Ge1-xSnx合金：带隙浓度Γ随Sn浓度的演化带混合效应的后果
7. Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration [O] . Timothy D. Eales, Igor P. Marko, Stefan Schulz, 2019

机译：GE1-XSNX合金：带混合效应对带间隙γ型γ浓度的演变的后果

Evidence of defect band mechanism responsible for band gap evolution in (ZnO)1−x(GaN)x alloys

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