Electrochemical Deposition of Te and Se on Flat TiO2for Solar Cell Application

摘要

Te and Se layers were deposited on 〈glass/FTO/flat-TiO2〉 by electrochemical deposition. The Te-Se-stacked layer was annealed at 200°C, and then, the migration of Te into the Se layer by annealing was confirmed using auger electron spectroscopy (AES), which was performed by Te doping on the Se layer. Au back contact was coated by vacuum deposition on the Te-doped Se layer, resulting in superstrate-structured solar cells of 〈glass/FTO/flat-TiO2/Se-doped Te/Au〉 with a 0.50 V open-circuit voltage, 6.4 mA/cm2 photocurrent density, 0.36 fill factor, and 1.17% conversion efficiency.