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Correction: Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

机译：校正：退火温度对VO2纳米线的溶胶 - 凝胶合成的作用，其金属绝缘体过渡的原位特征

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Y.-R. Jo; S.-H. Myeong; B.-J. Kim;
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1. Correction: Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition [J] . Y.-R. Jo, S.-H. Myeong, B.-J. Kim RSC Advances . 2018 ,第56期

机译：校正：退火温度在VO2纳米线的溶胶-凝胶合成中的作用及其金属-绝缘体转变的原位表征
2. Correction: Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition [J] . Y.-R. Jo, S.-H. Myeong, B.-J. Kim RSC Advances . 2018 ,第56期

机译：校正：退火温度在VO2纳米线的溶胶-凝胶合成中的作用及其金属-绝缘体转变的原位表征
3. Correction: Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition [J] . Y.-R. Jo, S.-H. Myeong, B.-J. Kim RSC Advances . 2018 ,第58期

机译：校正：退火温度在VO2纳米线的溶胶-凝胶合成中的作用及其金属-绝缘体转变的原位表征
4. Radio Frequency Temperature Transducers Based on Insulator-Metal Phase Transition in VO2 and Ge-Doped VO2 ALD Thin Films [C] . Andrei A. Muller, Riyaz Khadar, Kham M. Niang, International Conference on Solid-State Sensors, Actuators and Microsystems . 2021

机译：基于VO2和GE掺杂VO2 ALD薄膜中绝缘子 - 金属相转变的射频温度传感器
5. Relative Influence of Intrinsic and Extrinsic Factors on the Metal-Insulator Transition of VO2 Nanowires. [D] . Kim, In Soo. 2014

机译：内部和外部因素对VO2纳米线的金属-绝缘体转变的相对影响。
6. In Situ Atom Scale Visualization of Domain Wall Dynamics in VO2 Insulator-Metal Phase Transition [O] . Xinfeng He, Tao Xu, Xiaofeng Xu, -1

机译：VO2绝缘体-金属相变中畴壁动力学的原位原子尺度可视化
7. Correlation between thermal annealing temperature and Joule-heating based insulator-metal transition in VO2 nanobeams [O] . Rathi Servin, Park Jin-Hyung, Lee In-yeal, 2014

机译：VO2纳米束中热退火温度与基于焦耳热的绝缘体-金属转变的相关性

Correction: Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

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