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Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication

机译：具有金纳米颗粒的石墨烯氧化物器件中的非极性和互补电阻切换特性：装置制造的不同方法

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Geetika Khurana; Nitu Kumar; Manish Chhowalla; James F. Scott; Ram S. Katiyar;
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1. Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication [J] . Geetika Khurana, Nitu Kumar, Manish Chhowalla, Scientific reports. . 2019,第1期

机译：具有金纳米颗粒的石墨烯氧化物器件中的非极性和互补电阻切换特性：装置制造的不同方法
2. Interconversion of complementary resistive switching from graphene oxide based bipolar multilevel resistive switching device [J] . Parthasarathi Pal, Yeong Her Wang Applied Physics Letters . 2020,第5期

机译：基于石墨烯的双极多电平电阻切换装置的互补电阻切换的互连
3. Oxygen-ion-migration-modulated bipolar resistive switching and complementary resistive switching in tungsten/indium tin oxide/gold memory device [J] . Wu Xinghui, Zhang Qiuhui, Cui Nana, Japanese journal of applied physics . 2018,第6期

机译：氧化钨/氧化铟锡/金记忆装置中的氧离子迁移调制的双极电阻和互补电阻切换
4. Resistive Switching Characteristics of Hydrogen Peroxide Surface Oxidized ZnO-based Transparent Resistive Memory Devices [C] . F. M. Simanjuntak, B. Pattanayak, C. C. Lin, Meeting of the Electrochemical Society . 2017

机译：过氧化氢表面氧化ZnO基透明电阻存储器件的电阻切换特性
5. Scanning tunneling microscopy studies of growth medium & temperature dependent structural phases of alkanethiol self-assembled monolayers, reactive self-assembled monolayers, & flat gold nanoparticle/indium tin oxide substrates and a scanning surface photovoltage microscopy study for local mechanical stress characterization in complementary metal oxide semiconductor devices. [D] . Dahanayaka, Dahanayaka Liyanage Daminda Hemal. 2010

机译：烷烃硫醇自组装单分子层，反应性自组装单分子层，扁平金纳米颗粒/铟锡氧化物基质的生长介质和温度依赖性结构相的扫描隧道显微镜研究，以及互补金属氧化物中局部机械应力表征的扫描表面光电压显微镜研究半导体器件。
6. Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication [O] . Geetika Khurana, Nitu Kumar, Manish Chhowalla, -1

机译：具有金纳米粒子的氧化石墨烯器件中的非极性和互补电阻切换特性：器件制造的多种方法
7. Complementary Resistive Switching in Tantalum Oxide-Based Resistive Memory Devices [O] . Yang, Yuchao, Sheridan, Patrick, Lu, Wei 2012

机译：基于钽氧化物电阻的互补电阻转换内存设备

Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication

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