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Electronic properties of non-doped and doped polyacetylene films studied by E.S.R.

机译:通过E.S.R研究的非掺杂和掺杂聚乙炔薄膜的电子性质。

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摘要

Cis-polyacetylene films have been synthetized and doped with iodine and antimony penta fluoride, using usual chemical techniques. Doping, leads, after saturation, to conductivity values of about 120 and 25 (Ω cm) -1 at room temperature, respectively for I2 and SbF 5 dopants. The E.S.R. of cis- and trans-, non-doped and doped (CH)x films has been studied. A qualitative analysis of the results allows a better understanding of the electronic properties of these extremely non homogeneous and highly conductive doped polymeric materials.
机译:使用通常的化学技术合成并掺杂含碘和锑五氟化乙烷氟化乙烯薄膜。在饱和后掺杂,在室温下分别在室温下进行约120和25(ωcm)-1的电导率值,用于I2和SBF 5掺杂剂。 E.S.R.已经研究了CIS-和反式,非掺杂和掺杂(CH)X薄膜。对结果的定性分析允许更好地理解这些极其非均匀和高导电掺杂的聚合物材料的电子性质。

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