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Structural formation aspects of Zn–containing nanoparticles synthesized by ion implantation in Si (001) followed by thermal annealing

机译：通过离子注入在Si（001）中合成的含Zn的纳米颗粒的结构形成方面，然后进行热退火

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K. B. Eidelman; N. Yu. Tabachkova; K. D. Shcherbachev; Yu. N. Parkhomenko; V. V. Privesentsev; D. M. Migunov;
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1. Structural properties of the formation of zinc-containing nanoparticles obtained by ion implantation in Si (001) and subsequent thermal annealing [J] . Ksenia B. Eidelman, Nataliya Yu. Tabachkova, Kirill D. Shcherbachev, Modern Electronic Materials . 2017,第3期

机译：通过在Si（001）中进行离子注入并随后进行热退火获得的含锌纳米颗粒形成的结构特性
2. Defect structure transformation after thermal annealing in a surface layer of Zn-implanted Si(001) substrates [J] . Shcherbachev K., Privezentsev V., Kulikauskas V., Journal of Applied Crystallography . 2013,第4期

机译：Zn注入的Si（001）衬底表面层热退火后的缺陷结构转变
3. Study of the Properties of a Si Surface Layer Implanted with ~(64)Zn~+ and ~(16)O~+ Ions during the Formation of ZnO Nanoparticles under Thermal Annealing [J] . V. V. Privezentsev, V. S. Kulikauskas, V. V. Zatekin, Journal of surface investigation: x-ray, synchrotron and neutron techniques . 2015,第3期

机译：退火条件下ZnO纳米粒子形成过程中注入〜（64）Zn〜+和〜（16）O〜+离子的Si表面层的性能研究
4. Formation of Voids in SiO_2/Si Substrate by Zn Implantation and Thermal Annealing [C] . V.V. Privezentsev, P.N. Chernykh, D.V. Petrov Gettering and defect engineering in semiconductor technology XIV . 2011

机译：Zn注入和热退火在SiO_2 / Si衬底中形成空隙。
5. Investigating thermal transformations of ligand-stabilized gold nanoparticles: Influence of the structural attributes of the nanoparticle and its environment on thermal stability [D] . Smith, Beverly Lynne 2015

机译：研究配体稳定的金纳米粒子的热转变：纳米粒子的结构属性及其环境对热稳定性的影响
6. Defect structure transformation after thermal annealing in a surface layer of Zn-implanted Si(001) substrates [O] . Kirill Shcherbachev, Vladimir Privezentsev, Vaclav Kulikauskas, -1

机译：Zn注入的Si（001）衬底表面层热退火后的缺陷结构转变
7. Structural properties of the formation of zinc-containing nanoparticles obtained by ion implantation in Si (001) and subsequent thermal annealing [O] . Ksenia B. Eidelman, Nataliya Yu. Tabachkova, Kirill D. Shcherbachev, 2017

机译：通过在si（001）中离子注入并随后热退火获得的含锌纳米颗粒的形成的结构性质
8. Origins of Structural Defects in BF sub 2+ -Implanted and Rapid-Thermally-Annealed Silicon: Conditions for Defect-Free Regrowth [R] . Sands, T., Washburn, J., Myers, E., 1984

机译：BF sub 2+ - 嵌入和快速热退火硅结构缺陷的起源：无缺陷再生的条件

Structural formation aspects of Zn–containing nanoparticles synthesized by ion implantation in Si (001) followed by thermal annealing

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