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The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure

机译：具有改进的MESA结构的高击穿电压垂直GaN-On-GaN P-I-N二极管的研究

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Wen-Chieh Ho; Yao-Hsing Liu; Wen-Hsuan Wu; Sung-Wen Huang Chen; Jerry Tzou; Hao-Chung Kuo; Chia-Wei Sun;
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1. Two-Step Mesa Structure GaN p-n Diodes With Low ON-Resistance, High Breakdown Voltage, and Excellent Avalanche Capabilities [J] . Ohta Hiroshi, Asai Naomi, Horikiri Fumimasa, IEEE Electron Device Letters . 2020,第1期

机译：两步MESA结构GaN P-N二极管，具有低导通电阻，高击穿电压和优异的雪崩功能
2. Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers [J] . S. Nigam, Jihyun Kim, B. Luo, Solid-State Electronics . 2003,第9期

机译：器件面积，台面长度和金属重叠距离对4H-SiC p-i-n整流器击穿电压的影响
3. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures [J] . Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Annales de l'I.H.P . 2020,第7期

机译：升高温度下垂直GaN-On-GaN肖特基二极管高压传导机制的变化
4. Stable Fabrication of High Breakdown Voltage Mesa-Structure Vertical GaN p-n Junction Diodes Using Electrochemical Etching [C] . Hiroshi Ohta, Naomi Asai, Tomoyoshi Mishima, International Meeting for Future of Electron Devices, Kansai . 2018

机译：高击穿电压台面结构垂直GaN p-n结二极管的电化学刻蚀稳定制备
5. Metal/hydrogenated amorphous silicon/crystalline silicon hetero-structure with directional breakdown: A low-cost, high-density, diode array approach to PROMs. [D] . Zhu, Hong. 2000

机译：具有方向性击穿的金属/氢化非晶硅/晶体硅异质结构：一种低成本，高密度的PROM二极管阵列方法。
6. Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors [O] . Abhinay Sandupatla, Subramaniam Arulkumaran, Ng Geok Ing, 2020

机译：垂直GaN-on-GaN肖特基二极管作为α粒子辐射传感器
7. Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors [O] . Abhinay Sandupatla, Subramaniam Arulkumaran, Ng Geok Ing, 2020

机译：垂直GaN-On-GaN肖特基二极管作为α-粒子辐射传感器

The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure

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