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Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire

机译：卤化物气相外延在蓝宝石上生长的Sn掺杂α-GA2O3的深阱光谱

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A. Y. Polyakov; N. B. Smirnov; I. V. Shchemerov; E. B. Yakimov; V. I. Nikolaev; S. I. Stepanov; A. I. Pechnikov; A. V. Chernykh; K. D. Shcherbachev; A. S. Shikoh; A. Kochkova; A. A. Vasilev; S. J. Pearton;
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1. Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire [J] . A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, APL Materials . 2019,第5期

机译：蓝宝石上卤化物气相外延生长的Sn掺杂α-Ga2O3的深阱光谱
2. Electrical properties, structural properties, and deep trap spectra of thin α-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates [J] . Dae-Woo Jeon, Hoki Son, Jonghee Hwang, APL Materials . 2018,第12期

机译：基底平面蓝宝石衬底上通过卤化物气相外延生长的α-Ga2O3薄膜的电学性质，结构性质和深阱谱
3. Halide Vapor Phase Epitaxy α- and ε-Ga2O3 Epitaxial Films Grown on Patterned Sapphire Substrates [J] . Sevastian Shapenkov, Oleg Vyvenko, Evgeny Ubyivovk, Physica status solidi . 2020,第14期

机译：在图案化的蓝宝石衬底上生长的卤化卤阶期外延α-和ε-GA2O3外延薄膜
4. Comparative optical characterization of GaN grown by metal-organic vapor phase epitaxy, gas source molecular beam epitaxy and halide vapor phase epitaxy [C] . M.Leroux, B.Beaumont, N.Grandjean, Symposium C on UV, blue and green light emission from semiconductor materials;Symposium on nonlinear optical and optoelectronic organic materials . 1997

机译：金属 - 有机气相外延，气源分子束外延和卤化物气相外延生长GaN的对比光学特征
5. Recombination dynamics in silicon-doped aluminum gallium nitride and ultraviolet light-emitting diodes grown on sapphire and bulk aluminum nitride substrates by metal-organic vapor-phase epitaxy [D] . Chen, Kaixuan 2008

机译：通过金属有机气相外延在蓝宝石和块状氮化铝衬底上生长的掺硅氮化铝镓和紫外发光二极管的复合动力学
6. Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate [O] . Hoki Son, Ye-ji Choi, Soon-Ku Hong, 2021

机译：卤化物气相外延在锥形截肢型蓝宝石衬底上生长的α-GA2O3癫痫脱位的减少
7. Electrical properties, structural properties, and deep trap spectra of thin α-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates [O] . Dae-Woo Jeon, Hoki Son, Jonghee Hwang, 2018

机译：卤化物气相外延在基底平面蓝宝石基板上生长的薄α-GA2O3薄膜的电性能，结构性能和深阱光谱

Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire

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