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Investigation of SiC Single Crystal Polishing by Combination of Anodic Oxidation and Mechanical Polishing

机译：通过阳极氧化和机械抛光组合研究SiC单晶抛光

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Xincheng Yin;
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1. Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing [J] . Yang Xu, Sun Rongyan, Ohkubo Yuji, Electrochimica Acta . 2018,第期

机译：电化学机械抛光4H-SiC（0001）的阳极氧化机理研究
2. Atomic-scale finishing of carbon face of single crystal SiC by combination of thermal oxidation pretreatment and slurry polishing [J] . Hui Deng, Nian Liu, Katsuyoshi Endo, Applied Surface Science . 2018,第MARa15期

机译：热氧化预处理与浆料抛光相结合的单晶SiC碳面原子级精加工
3. Damage-free and Atomically-flat Finishing of Single Crystal SiC by Combination of Oxidation and Soft Abrasive Polishing [J] . Hui Deng, Katsuyoshi Endo, Kazuya Yamamura Procedia CIRP . 2014,第5期

机译：氧化与软磨料抛光相结合的单晶SiC的无损和原子平坦抛光
4. Flattening of single crystal SiC by combination of anodic oxidation and soft abrasive polishing [C] . Hui Deng, Kenji Hosoya, Yusuke Imanishi, International Conference of the European Society for Precision Engineering and Nanotechnology . 2015

机译：通过阳极氧化和软研磨抛光的组合平整单晶SiC
5. Investigation on Inter-layer Dielectric Processed by Chemical Mechanical Polishing and Spin-on Dielectric for Complementary Metal-oxide-semiconductor Compatible Devices [D] . Saman, Rahimah Mohd. 2016

机译：互补金属氧化物半导体兼容器件的化学机械抛光和旋涂介电层间介电层的研究
6. Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC [O] . Gaoling Ma, Shujuan Li, Xu Liu, 2021

机译：单晶4H-SIC等血浆电解处理和机械抛光的组合
7. Damage-free and Atomically-flat Finishing of Single Crystal SiC by Combination of Oxidation and Soft Abrasive Polishing [O] . Deng Hui, Endo Katsuyoshi, Yamamura Kazuya 2014

机译：氧化与软磨料抛光相结合的单晶SiC无损和原子平坦表面处理
8. Dislocation Density Profile of Mechanically Polished Iron Single Crystals Determined by Positron Annihilation [R] . Waber, J. T., Park, Y. K. 1986

机译：正电子湮没法测定机械抛光铁单晶的位错密度分布

Investigation of SiC Single Crystal Polishing by Combination of Anodic Oxidation and Mechanical Polishing

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