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Theoretical study of α-U/W(110) thin films from density functional theory calculations: Structural, magnetic and electronic properties

机译:密度函数理论计算α-U / W(110)薄膜的理论研究:结构,磁性和电子性能

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摘要

Structural, electronic and magnetic properties were calculated for theoptimized $lpha$-U/W(110) thin films (TFs) within the density functionaltheory. Our optimization for 1U/7W(110) shows that the U-W vertical interlayerspacing (ILS) is expanded by 14.0% compared to our calculated bulk W-W ILS.Spin and orbital magnetic moments (MMs) per U atom were found to be enhancedfrom zero for the bulk of $lpha$-U to 1.4 $mu_B$ and -0.4 $mu_B$ at theinterface of the 1U/7W(110), respectively. Inversely, our result for 3U/7W(110)TFs shows that the surface U-U ILS is contracted by 15.7% compared to ourobtained bulk U-U spacing. The enhanced spin and orbital MMs in the 1U/7W(110)were then found to be suppressed in 3U/7W(110) to their ignorable bulk values.The calculated density of states (DOS) corroborates the enhancement andsuppression of the MMs and shows that the total DOS, in agreement withexperiment, is dominated in the vicinity of Fermi level by the 5f U states.Proximity and mismatch effects of the nonmagnetic W(110) substrate wereassessed and found to be important for this system.
机译:结构,电子和磁特性进行了计算theoptimized $ 阿尔法$ -U / W密度functionaltheory内(110)的薄膜(TFS)。我们的于1U / 7W(110)示出了最优化的是,UW垂直interlayerspacing(ILS)是由14.0%的膨胀相比,我们的计算散装WW ILS.Spin和每U原子轨道磁矩(MMS)被发现是零enhancedfrom为散装$ 阿尔法$ -U的〜1.4 $ mu_B $和-0.4 $ mu_B $分别在1U / 7W(110),的这种接口的。相反,我们的结果为3U / 7W(110)的TF表明面U-U ILS是由15.7%收缩相比ourobtained大容量U-U的间距。然后在1U / 7W(110)的增强的自旋和轨道的MM被发现在3U / 7W(110)要被抑制到的状态(DOS)其可忽略的散装values.The计算密度证实了MMS和节目的增强andsuppression的总DOS,在协议withexperiment,在费米能级由5Fùstates.Proximity和非磁性W的失配效应附近主导(110)衬底wereassessed并发现是该系统很重要的。

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