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Optical-constant calculation of non-uniform thickness thin films of the Ge10As15Se75 chalcogenide glassy alloy in the sub-band-gap region (0.1–1.8eV)

机译:亚带间隙区域GE10A15SE75硫族化物玻璃合金的非均匀厚度薄膜的光常数计算(0.1-1.8EV)

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摘要

Optical-transmission spectra are very sensitive to inhomogeneities in thin films. In particular, a non-uniform thickness produces a clear shrinking in the transmission spectrum at normal incidence. If this deformation is not taken into account, it may lead to serious errors in the calculated values of the refractive index and film thickness. In this paper, a method first applied by Swanepoel for enabling the transformation of an optical-transmission spectrum of a thin film of wedge-shaped thickness into the spectrum of a uniform film, whose thickness is equal to the average thickness of the non-uniform layer, has been employed. This leads subsequently to the accurate derivation of the refractive index in the subgap region (0.1-1.8 eV), the average thickness, as well as a parameter indicating the degree of film-thickness uniformity. This optical procedure is applied to the particular case of freshly-prepared films of the Ge10As15Se75 ternary chalcogenide glassy alloy. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-oscillator model. The optical-absorption edge is described using the 'non-direct transition' model proposed by Tauc, and the optical energy gap is calculated by Tauc's extrapolation. Finally, the photo-induced and thermally induced changes in the optical properties of the a-Ge10As15Se75 layers are also studied. (C) 1999 Elsevier Science S.A. All rights reserved.
机译:光透射光谱对薄膜中的不均匀性非常敏感。特别地,在正常入射时,不均匀的厚度在透射谱中产生透明缩小。如果未考虑这种变形,则可能导致折射率和膜厚度的计算值中的严重误差。本文首先由SwanePoEL施加的方法,使楔形厚度的薄膜的光透射光谱转换为均匀膜的光谱,其厚度等于不均匀的平均厚度层,已经采用了。这将随后引导到沉积区域(0.1-1.8eV)中的折射率的精确导出,平均厚度以及指示薄膜厚度均匀度的程度的参数。该光学程序适用于GE10A15SE75三元硫代硫代硫化物玻璃合金的新鲜制备的薄膜的特定情况。根据Wemple-Didomenico单振荡器模型讨论了折射率的分散。使用Tauc提出的“非直接转换”模型描述光学吸收边缘,并且通过Tauc的外推计算光学能隙。最后,还研究了A-GE10A115SE75层的光学性质中的光诱导和热诱导的变化。 (c)1999年Elsevier Science S.A.保留所有权利。

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