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Comparative Study of Gamma Radiation Effects on Solar Cells, Photodiodes, and Phototransistors

机译:伽马辐射效应对太阳能电池,光电二极管和光电晶体管的比较研究

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摘要

This paper presents the behavior of various optoelectronic devices after gamma irradiation. A number of PIN photodiodes, phototransistors, and solar panels have been exposed to gamma irradiation. Several types of photodiodes and phototransistors were used in the experiment. I-V characteristics (current dependance on voltage) of these devices have been measured before and after irradiation. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.
机译:本文介绍了伽马辐射后各种光电器件的行为。许多PIN光电二极管,光电晶体管和太阳能电池板已暴露于伽马辐照。实验中使用了几种类型的光电二极管和光电晶体管。在照射前后测量了这些装置的I-V电流特性(电流依赖性)。也观察到退火过程。已经执行了测量结果的比较分析,以确定辐射环境中光电器件的可靠性。

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