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Spin and Valley States in Gate-Defined Bilayer Graphene Quantum Dots

机译:旋转和山谷在门式双层石墨烯量子点中的状态

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摘要

In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers n=1,2,…50 can be filled successively into the quantum system with charging energies exceeding 10 meV. For the lowest quantum states, we can clearly observe valley and Zeeman splittings with a spin g-factor of g_{s}≈2. In the low-field limit, the valley splitting depends linearly on the perpendicular magnetic field and is in qualitative agreement with calculations.
机译:在双层石墨烯中,静电限制可以通过顶部和后栅电极的合适设计来实现。我们通过双层石墨烯量子点测量电子传输,其被横向区域横向限制并通过P-N结连接到引线。实现单电子和孔占用,并且电荷载体n = 1,2,... 50可以连续填充到量子系统中,充电能量超过10meV。对于最低量子状态,我们可以清楚地观察谷和塞曼分裂,并在G_ {s}≈2的旋转g因子。在低场限制中,谷分裂在垂直磁场上线性取决于与计算的定性协议。

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