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Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction

机译：隧道磁阻比对纳米级间隔厚度的依赖性和基于双MgO的垂直磁隧道交界处的依赖性

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Du-Yeong Lee; Song-Hwa Hong; Seung-Eun Lee; Jea-Gun Park;
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1. Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction [J] . Du-Yeong Lee, Song-Hwa Hong, Seung-Eun Lee, Scientific reports. . 2016,第1期

机译：隧道磁阻比对纳米级间隔厚度的依赖性和基于双MgO的垂直磁隧道交界处的依赖性
2. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure [J] . Du-Yeong Lee, Seung-Eun Lee, Tae-Hun Shim, Nanoscale Research Letters . 2016,第1期

机译：Co 2 Fe 6 B 2 顶部和底部之间基于MgO的垂直磁-隧道-隧道结自旋阀的隧穿磁阻比比较层结构
3. Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 degrees C [J] . Takemura Yasutaka, Lee Du-Yeong, Lee Seung-Eun, Nanotechnology . 2016,第48期

机译：在400摄氏度下对Co2Fe6B2顶部自由层进行双MgO垂直磁性隧穿结自旋阀的隧穿磁阻比对Pt籽晶层厚度的依赖性
4. Nanoscale Cubic Growth Of SrS Codoped With Eu And Sm On MgO (001) For Optical Memory Materials [C] . C. Chen, K. L. Teo, T. C. Chong International Conference on the Physics of Semiconductors . 2005

机译：纳米级立方体生长的SRS编排在MgO（001）上用欧盟和SM进行光学记忆材料
5. Effect of Relative Humidity and CO2 Concentration on the Properties of Carbonated Reactive MgO Cement Based Materials. [D] . Bilan, Yaroslav. 2014

机译：相对湿度和CO2浓度对碳化活性MgO水泥基材料性能的影响。
6. Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction [O] . Du-Yeong Lee, Song-Hwa Hong, Seung-Eun Lee, -1

机译：隧道-磁阻比对纳米级间隔物厚度和双MgO基垂直磁隧穿结材料的依赖性
7. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure [O] . Du-Yeong Lee, Seung-Eun Lee, Tae-Hun Shim, 2016

机译：Co2Fe6B2上下自由层结构之间基于MgO的垂直-电磁-隧道-结自旋阀的隧道-磁阻比比较

Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction

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