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Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires

机译：堆叠故障在诸如普零GAAS / GAINP核心/壳纳米线中的电子结构和光发射的堆叠故障的意想不到好处

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Xiaoming Yuan; Lin Li; Ziyuan Li; Fan Wang; Naiyin Wang; Lan Fu; Jun He; Hark Hoe Tan; Chennupati Jagadish;
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年度 2019
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1. Electronic structure and optical absorption of GaAs/Al_xGa_(1-x)As and Al_xGa_(1-x)As/GaAs core-shell nanowires [J] . V. V. Ravi Kishore, B. Partoens, F. M. Peeters Physical review . 2010 ,第23期

机译：GaAs / Al_xGa_（1-x）As和Al_xGa_（1-x）As / GaAs核壳纳米线的电子结构和光吸收
2. Manipulation of band structures in wurtzite and zinc-blende GaAs/InAs-core-shell nanowires [J] . Song Changsheng, Wang Jiqing, Lin Weixian, Journal of Applied Physics . 2013 ,第11期

机译：纤锌矿和掺锌GaAs / InAs核壳纳米线的能带结构操纵
3. Manipulation of band structures in wurtzite and zinc-blende GaAs/InAs-core-shell nanowires [J] . Changsheng Song, Jiqing Wang, Weixian Lin, Journal of Applied Physics . 2013 ,第11期

机译：纤锌矿和掺锌GaAs / InAs核壳纳米线的能带结构操纵
4. Evidence of near band-edge electronic states and enhanced optical absorption in high-spectrally resolved room temperature photoreflectance of GaAs/AIGaAs core/shell nanowires [C] . A.Creti, P.Prete, N.Lovergine, European Optical Society annual meeting . 2016

机译：GaAs / AIGaAs核/壳纳米线在高光谱分辨的室温光反射中的近带边缘电子态和增强的光吸收的证据
5. Bandgap Tuning of GaAs/GaAsSb(N) Core-Shell Nanowires Grown by Molecular Beam Epitaxy [D] . Kasanaboina, Pavan Kumar. 2016

机译：通过分子束外延生长的GaAs / Gaassb（N）核心壳纳米线的带隙调谐
6. Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores [O] . M Paladugu, J Zou, YN Guo, 2009

机译：InAs纳米线核周围的纤锌矿结构GaAs壳的演变
7. Electronic structure and optical absorption ofGaAs/AlxGa1−xAsandAlxGa1−xAs/GaAscore-shell nanowires [O] . V. V. Ravi Kishore, B. Partoens, F. M. Peeters 2010

机译：电子结构和光学吸收的Gaas / Alxga1-Xasandalxga1-XAS / GaaScore-Shell纳米线

Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires

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