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Spectral characteristics of mid-infrared light-emitting diodes based on InAs(Sb,P)

机译：基于INAS的中红外发光二极管的光谱特性（SB，P）

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N.K. Zhumashev; K.D. Mynbaev; N.L. Bazhenov; N.D. Stoyanov; S.S. Kizhaev; T.I. Gurina; A.P. Astakhova; A.V. Tchernyaev; S.S. Molchanov; H. Lipsanen; Kh.M. Salikhov; V.E. Bougrov;
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1. Characterization of InAs_(0.91)Sb_(0.09) for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution [J] . A Krier, M Stone, S E Krier Semiconductor science and technology . 2007,第6期

机译：InAs_（0.91）Sb_（0.09）的表征，用于通过富含Sb的液相外延生长的中红外发光二极管
2. Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays [J] . Craig A.P., Marshall A.R.J., Tian Z.-B., Applied Physics Letters . 2013,第25期

机译：具有Al0.9Ga0.2As0.1Sb0.9势垒层的基于中红外InAs0.79Sb0.21的nBn光电探测器，以及与InAs0.87Sb0.13 p-i-n二极管的比较，二者均使用界面失配阵列在GaAs上生长
3. Mid-infrared InAs_(0.79)Sb_(0.21) -based nBn photodetectors with Al_(0.9)Ga_(0.2)As_(0.1)Sb_(0.9) barrier layers, and comparisons with InAs_(0.87)Sb_(0.13) p-i-n diodes, both grown on GaAs using interfacial misfit arrays [J] . A. P. Craig, A. R. J. Marshall, Z.-B. Tian, Applied Physics Letters . 2013,第25期

机译：具有Al_（0.9）Ga_（0.2）As_（0.1）Sb_（0.9）势垒层的中红外InAs_（0.79）Sb_（0.21）基nBn光电探测器，以及与InAs_（0.87）Sb_（0.13）引脚二极管的比较使用界面失配阵列在GaAs上生长
4. Mid-infrared interband cascade light-emitting diodes with InAs/GaAsSb superlattices on InAs substrates [C] . Qi Lu, Yi Zhou, Jianxin Chen, International Conference on Smart Photonic and Optoelectronic Integrated Circuits;Society of Photo-Optical Instrumentation Engineers . 2020

机译：在InAs衬底上具有InAs / GaAsSb超晶格的中红外带间级联发光二极管
5. Advances in Inas/Gasb Type-II Superlattice Light-Emitting Diode Arrays [D] . Ricker, Russell J. 2017

机译：INAS / GASB Type-II超晶格发光二极管阵列的进步
6. Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral Range [O] . Mateusz Dyksik, Marcin Motyka, Grzegorz Sęk, 2015

机译：在中红外光谱范围内通过全晶片光致发光映射探测II型InAs / GaInSb W形量子阱的亚单层均匀性
7. Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays [O] . Craig Adam, Marshall Andrew, Tian Z.-B., 2013

机译：具有Al0.9Ga0.2As0.1Sb0.9势垒层的基于中红外InAs0.79Sb0.21的nBn光电探测器，以及与InAs0.87Sb0.13 p-i-n二极管的比较，两者均使用界面失配阵列在GaAs上生长

Spectral characteristics of mid-infrared light-emitting diodes based on InAs(Sb,P)

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