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Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

机译：通过离子注入和激光热退火的GE重掺杂GE的低温停用

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R. Milazzo; G. Impellizzeri; D. Piccinotti; D. De Salvador; A. Portavoce; A. La Magna; G. Fortunato; D. Mangelinck; V. Privitera; A. Carnera; E. Napolitani;
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1. Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing [J] . R. Milazzo, G. Impellizzeri, D. Piccinotti, Applied Physics Letters . 2017,第1期

机译：离子注入和激光热退火对Ge重掺杂N型锗的低温失活
2. Enabling n-type polycrystalline Ge junctionless FinFET of low thermal budget by in situ doping of channel and visible pulsed laser annealing [J] . Huang Wen-Hsien, Shieh Jia-Min, Kao Ming-Hsuan, Applied physics express . 2017,第2期

机译：通过沟道的原位掺杂和可见脉冲激光退火实现低热预算的n型多晶Ge无结FinFET
3. Remarkable p-type activation of heavily doped diamond accomplished by boron ion implantation at room temperature and subsequent annealing at relatively low temperatures of 1150 and 1300℃ [J] . Seki Yuhei, Hoshino Yasushi, Nakata Jyoji Applied Physics Letters . 2019,第7期

机译：通过在室温下注入硼离子并随后在1150和1300℃的相对低温下进行退火，可以实现重掺杂金刚石的显着p型活化
4. Anomalous Electrical Deactivation of Low Concentration Rapid Thermally Annealed Arsenic Implanted Silicon [C] . Altrip J.L., Evans A.G.R. Solid State Device Research Conference, 1992. ESSDERC '92 . 1992

机译：低浓度快速热退火砷注入硅的异常电失活
5. Optical studies of extremely heavily doped n-gallium arsenide produced by pulsed-laser annealing [D] . Yao, Huade 1989

机译：脉冲激光退火产生的极重掺杂砷化镓镓的光学研究
6. Electroanalytical Performance of Nitrogen-Doped Graphene Films Processed in One Step by Pulsed Laser Deposition Directly Coupled with Thermal Annealing [O] . Florent Bourquard, Yannick Bleu, Anne-Sophie Loir, 2019

机译：直接耦合热退火的脉冲激光沉积一步法制氮掺杂石墨烯薄膜的电分析性能
7. Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans [O] . Sharp, JA, Cowern, NEB, Webb, RP, 2006

机译：多次扫描进行非熔融激光退火后，预非晶硅中超浅硼注入的失活
8. Low-Temperature Radiation Damage in Silicon - 1: Annealing Studies on N-Type Material [R] . Awadelkarim, O. O. 1986

机译：硅中的低温辐射损伤 - 1：N型材料的退火研究

Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

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