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A Compact Quantum Model for Cylindrical Surrounding Gate MOSFETs using High-k Dielectrics

机译：高k电介质的圆柱形周围栅极MOSFET的紧凑型量子模型

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P. Vimala; N.B. Balamurugan;
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年度 2014
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1. Analytical modeling of the direct tunneling current through high-k gate stacks for long-channel cylindrical surrounding-gate MOSFETs [J] . Shi Lina, Zhuang Yiqi, Li Cong, Journal of Semiconductors . 2014,第3期

机译：通过高k栅堆叠的长沟道圆柱形环绕栅MOSFET的直接隧穿电流的分析模型
2. Effect of high-k and vacuum dielectrics as gate stack on a junctionless cylindrical surrounding gate (JL-CSG) MOSFET [J] . Sharma Aniruddh, Jain Arushi, Pratap Yogesh, Solid-State Electronics . 2016,第SEPa期

机译：高k和真空电介质作为栅极堆叠对无结圆柱环绕栅极（JL-CSG）MOSFET的影响
3. Compact Modeling of the Effects of Parasitic Internal Fringe Capacitance on the Threshold Voltage of High-k Gate-Dielectric Nanoscale SOI MOSFETs [J] . M. Jagadesh Kumar, Sumeet Kumar Gupta, Vivek Venkataraman IEEE Transactions on Electron Devices . 2006,第4期

机译：寄生内部边缘电容对高k栅介电纳米级SOI MOSFET阈值电压影响的紧凑模型
4. The Influence of High-K Material/SiO_2 Gate Stacks on Direct Gate Tunneling Current of Cylindrical Surrounding-Gate MOSFETs [C] . Fatimah. A. Noor, Christoforus Bimo, Khairurrijal International Conference on Materials Engineering and Nanotechnology . 2016

机译：高k材料/ SiO_2栅极堆栈对圆柱周围栅极MOSFET直接栅极隧道电流的影响
5. 1/f noise in hafnium based high-k gate dielectric MOSFETs and a review of modeling [D] . Devireddy, Siva Prasad. 2007

机译：基于Hafnium的高k栅极电介质MOSFET的1 / F噪声及造型评论
6. Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics [O] . C. Henkel, S. Abermann, O. Bethge, -1

机译：具有高k La2O3 / ZrO2栅极电介质的肖特基势垒SOI-MOSFET
7. Compact Modeling of Parasitic Internal Fringe Capacitance Effects on the Threshold Voltage of High-K Gate Dielectric Nanoscale SOI MOSFETs [O] . Kumar, M. Jagadesh, Gupta, Sumeet Kumar, Venkataraman, Vivek 2010

机译：寄生内部边缘电容效应的紧凑建模高K栅介质纳米级sOI mOsFET的阈值电压

A Compact Quantum Model for Cylindrical Surrounding Gate MOSFETs using High-k Dielectrics

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