首页> 外文OA文献 >Erratum: “Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions” J. Appl. Phys. 118, 033101 (2015)

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Erratum: “Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions” J. Appl. Phys. 118, 033101 (2015)

机译：错误：“电致发光转变能量在脉冲电流条件下的脉冲/ GaN多量子阱发光二极管中的电致发光过渡能量的注射电流依赖性”J。苹果。物理。 118,033101（2015）

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Feng Zhang; Masao Ikeda; Kun Zhou; Zongshun Liu; Jianping Liu; Shuming Zhang; Hui Yang;
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1. Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions [J] . Feng Zhang, Masao Ikeda, Kun Zhou, Journal of Applied Physics . 2015,第3期

机译：脉冲电流条件下InGaN / GaN多量子阱发光二极管中电致发光跃迁能量的注入电流依赖性
2. Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents [J] . Lu Cimang, Wang Lei, Lu Jianing, Journal of Applied Physics . 2013,第1期

机译：直流和脉冲电流下InGaN / GaN多量子阱发光二极管的电致发光光谱位移研究
3. Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents [J] . Cimang Lu, Lei Wang, Jianing Lu, Journal of Applied Physics . 2013,第1期

机译：直流和脉冲电流下InGaN / GaN多量子阱发光二极管的电致发光光谱位移研究
4. Effect of nonuniform current injection on electroluminescence spectra of InGaN-GaN blue-green light-emitting diode [C] . Irina Khmyrova, Yulia Kholopova, Sergey Larkin, International Conference on Indium Phosphide & Related Materials;International Symposium on Compound Semiconductors;Compound Semiconductor Week . 2016

机译：注入电流不均匀对InGaN-GaN蓝绿色发光二极管电致发光光谱的影响
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. Enhancing carrier transport and carrier capture with a good current spreading characteristic via graphene transparent conductive electrodes in InGaN/GaN multiple-quantum-well light emitting diodes [O] . Shih-Wei Feng, Ying-Hsiang Wang, Chin-Yi Tsai, -1

机译：通过InGaN / GaN多量子阱发光二极管中的石墨烯透明导电电极以良好的电流扩散特性增强载流子传输和载流子捕获
7. Erratum: “Current crowding in GaN/InGaN light emitting diodes on insulating substrates” J. Appl. Phys. 90, 4191 (2001) [O] . X. Guo, E. F. Schubert 2002

机译：误判：“天线/ INGAN发光二极管的当前拥挤在绝缘基板上”J。苹果。物理。 90,4191（2001）

Erratum: “Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions” J. Appl. Phys. 118, 033101 (2015)

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