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Detecting Small Amounts of Impurities and Defects in Silicon-oxide Films.

机译：检测氧化硅膜中的少量杂质和缺陷。

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Seiichi IWATA;
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年度 1998
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1. The possible escapes detected subsequent to AOI amounted to approximately 10 percent of AOI detectable defects [J] . Electronic Packaging and Production Group Electronic Packaging and Production . 1998,第10期

机译：AOI之后检测到的可能逸出量约占AOI可检测缺陷的10％
2. Influence of Shearing Amount on Detecting Crack-shaped Internal Defect by Shearography [J] . Kisoo Kang, Koungsuk Kim, Hyunchul Jung, Key Engineering Materials . 2006,第Pt1期

机译：剪切量对通过剪切法检测裂纹形内部缺陷的影响
3. Hydrogen passivation effects under negative bias temperature instability stress in metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon capacitors for flash memories [J] . Hee-Dong Kim, Ho-Myoung An, Yujeong Seo, Microelectronics reliability . 2010,第1期

机译：闪存中金属/氧化硅/氮化硅/氧化硅/硅电容器在负偏置温度不稳定性应力下的氢钝化效应
4. Influence of Shearing Amount on Detecting Crack-shaped Internal Defect by Shearography [C] . Kisoo Kang, Koungsuk Kim, Hyunchul Jung International Conference on Advanced Nondestructive Evaluation . 2006

机译：剪切量对剪切术检测裂缝形内部缺陷的影响
5. Delay discounting in Lewis and Fischer 344 rats: Implications for the use of an adjusting-amount procedure to detect between-strain differences [D] . Stein, Jeff S. 2010

机译：Lewis和Fischer 344大鼠的延迟贴现：使用调节量程序检测株间差异的含义
6. A method for testing the purity of commercial samples of T 1824 with observations on the amounts of coloured impurities present and the errors in plasma volume estimation caused by them [O] . D. Leeson, E. B. Reeve 1949

机译：一种测试T 1824商业样品纯度的方法观察存在的有色杂质的量以及由它们引起的血浆量估计误差
7. Removal of trace amounts of impurities in plating baths using synthetic inorganic adsorbents. (Part. 3). Adsorption of trace amounts of lead (II) ion in an iron-zinc alloy plating bath by means of a two-step column operation. [O] . Shoji KANEKO, Takashi HORI, Shuhei OKADA, 1988

机译：使用合成无机吸附剂除去镀浴中的痕量杂质。（第3部分）。通过两步柱操作在铁 - 锌合金镀浴中吸附痕量的铅（II）离子。
8. On the Influence of Small Amounts of Impurities on Recrystallization and Grain Growth of High Purity Iron. Note III. Effect of Boron on Recrystallization and Effect of Impurities on Normal and Anomalous Grain Growth [R] . Venturello, G., Bonaccorso, F., Gatta, G. D., 1964

机译：少量杂质对高纯铁再结晶和晶粒长大的影响。注3。硼对再结晶的影响及杂质对正常和异常晶粒长大的影响

Detecting Small Amounts of Impurities and Defects in Silicon-oxide Films.

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