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Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF+, CF2+, CHF2+, and CH2F+ ions

机译：氮化硅氢氟碳等离子体蚀刻中的氢气效应：CF +，CF2 +，CHF2 +和CH2F +离子的梁研究

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Tomoko Ito; Kazuhiro Karahashi; Masanaga Fukasawa; Tetsuya Tatsumi; Satoshi Hamaguchi;
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年度 2011
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1. Hydrofluorocarbon ion density of argon- or krypton-diluted CH2F2 plasmas: generation of CH2F+ and CHF2+ by dissociative-ionization in charge exchange collisions [J] . Kondo Yusuke, Miyawaki Yudai, Ishikawa Kenji, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2015 ,第4期

机译：氩气或k气稀释的CH2F2等离子体的氢氟碳离子密度：在电荷交换碰撞中通过解离电离产生CH2F +和CHF2 +
2. Electron beam generated plasmas: Characteristics and etching of silicon nitride [J] . Walton S. G., Boris D. R., Hernandez S. C., Microelectronic Engineering . 2017 ,第JANa期

机译：电子束产生的等离子体：氮化硅的特性和蚀刻
3. Atomic layer etching of silicon nitride using cyclic process with hydrofluorocarbon chemistry [J] . Ishii Yohei, Okuma Kazumasa, Saldana Tiffany, Japanese journal of applied physics . 2017 ,第6S2期

机译：使用氢氟碳化合物化学的循环工艺对氮化硅进行原子层蚀刻
4. High Selectivity in Dry Etching of Silicon Nitride over Si Using a Novel Hydrofluorocarbon Etch Gas in a Microwave Excited Plasma for FinFET [C] . Y. Nakao, T. Matsuo, A. Teramoto, International symposium on silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 4;Meeting of the Electrochemical Society . 2014

机译：在FinFET的微波激发等离子体中使用新型氢氟烃蚀刻气体在硅上干蚀刻氮化硅的高选择性
5. Studies of the effects of fluorocarbon deposition and etching on silicon and silicon dioxide etching processes using methyl trifluoride in an inductively coupled plasma reactor, and the development of a reactive ion beam system for the study of plasma-surface interaction mechanisms. [D] . Rueger, Neal R. 1998

机译：在感应耦合等离子体反应器中研究碳氟化合物沉积和蚀刻对硅和二氧化硅蚀刻工艺的影响（使用三氟化甲基），并开发了用于研究等离子体与表面相互作用机理的反应离子束系统。
6. Generation of high photocurrent in three-dimensional silicon quantum dot superlattice fabricated by combining bio-template and neutral beam etching for quantum dot solar cells [O] . Makoto Igarashi, Weiguo Hu, Mohammad Maksudur Rahman, 2013

机译：生物模板与中性束刻蚀相结合制造的三维硅量子点超晶格中高光电流的产生
7. Mechanical and etching properties of dual ion beam deposited hydrogen-free silicon nitride films [O] . Tsang MP, Ong CW, Chong N, 2001

机译：双离子束沉积的无氢氮化硅膜的机械和蚀刻性能
8. RF Plasma Enhanced Vapor Deposition and Etching of Silicon Nitride. [R] . hampy, r. e. 1978

机译：射频等离子体增强气相沉积和氮化硅蚀刻。

Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF+, CF2+, CHF2+, and CH2F+ ions

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