X-band Core Chip SiGe design for Phased Array T/R Modules

摘要

The structure of the Core Chip for Phased Array T R Modules is presented. Methods for the formation of a phase delay for X phase shifters are considered. An original differential design of SiGe core chip for X-band is presented. The schematic of 5 bits phase shifter and attenuator are designed. It consist of a series number LPF and HPF filters. Gain of phase shifter is 1.5 dB. Attenuator has the adjustment range from 0 to 24dB. Linear output power of the core chip is 5dBm. The total consumed current of the device is 158mA, at 5V power supply.