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Performance of InGaN/GaN Light Emitting Diodes with n-GaN Layer Embedded with SiO2 Nano-Particles

机译：用SiO2纳米粒子嵌入N-GaN层的InGaN / GaN发光二极管的性能

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Hong-Seo Yom; Jin-Kyu Yang; Alexander Polyakov; In-Hwan Lee;
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1. Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers [J] . Yujue Yang, Yiping Zeng Physica status solidi . 2014,第7期

机译：具有InGaN / GaN超晶格和梯度组成的InGaN / GaN超晶格中间层的InGaN发光二极管的性能增强
2. Deep Electron Traps Responsible for Higher Quantum Efficiency in Improved GaN/InGaN Light Emitting Diodes Embedded with SiO2 Nanoparticles [J] . Polyakov A. Y., Smirnov N. B., Yakimov E. B., ECS Journal of Solid State Science and Technology . 2016,第10期

机译：深电子陷阱负责嵌入SiO2纳米粒子的改进型GaN / InGaN发光二极管中的更高量子效率
3. Energy coupling processes in InGaN/GaN nanopillar light emitting diodes embedded with Ag and Ag/SiO2 nanoparticles [J] . Lee-Woon Jang, Dae-Woo Jeon, Trilochan Sahoo Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology . 2012,第40期

机译：嵌入Ag和Ag / SiO2纳米颗粒的InGaN / GaN纳米柱发光二极管的能量耦合过程
4. InGaN blue light-emitting diodes with optimized n-GaN layer [C] . Ivan Eliashevich, Emcore Corp., Somerset, Conference on Light-Emitting diodes: Research, manufacturing, and applications . 1999

机译：具有优化的n-GaN层的InGaN蓝色发光二极管
5. Investigation and Analysis of Thermal Performance of InGaN/GaN Light Emitting Diodes [D] . Das, Shiladitya. 2017

机译：InGaN / GaN发光二极管热性能的调查分析
6. Enhancement of Light Extraction Efficiency for InGaN/GaN Light-Emitting Diodes Using Silver Nanoparticle Embedded ZnO Thin Films [O] . Po-Hsun Lei, Chyi-Da Yang, Po-Chun Huang, 2019

机译：使用银纳米颗粒嵌入的ZnO薄膜增强InGaN / GaN发光二极管的光提取效率
7. Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer [O] . Lee-Woon Jang, Jin-Woo Ju, Dae-Woo Jeon, 2012

机译：嵌入纳米针层的Ag纳米颗粒的InGaN / GaN蓝色发光二极管的增强光输出

Performance of InGaN/GaN Light Emitting Diodes with n-GaN Layer Embedded with SiO2 Nano-Particles

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