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Impact of Device Parameter Variation on the Electrical Characteristic of N-type Junctionless Nanowire Transistor with High-k Dielectrics

机译：具有高k电介质的N型结纳米线晶体管电气特性对装置参数变化的影响

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Mohammed Adamu Sule; Mathangi Ramakrishnan; Nurul Ezaila Alias; Norlina Paraman; Zaharah Johari; Afiq Hamzah; Michael Loong Peng Tan; Usman Ulllah Sheikh;
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2. Nanoscale High-k Dielectrics for Junctionless Nanowire Transistor for Drain Current Analysis [J] . Pravin J. Charles, Prajoon P., Nesamania Flavia Princess, Journal of Electronic Materials . 2018,第5期

机译：无连接纳米线晶体管的纳米级高k电介质用于漏极电流分析
3. III-V Junctionless Nanowire Transistor with High-k Dielectric Material and Schottky Contacts [J] . Chatterjee Neel, Gupta Akriti, Pandey Sujata Journal of Nanoelectronics and Optoelectronics . 2017,第9期

机译：具有高k介电材料和肖特基触点的III-V无连接纳米线晶体管
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5. Investigation of Electrical Properties of Transition Metal Dichalcogenides Transistors with High-K Dielectrics [D] . Zhao, Peng 2018

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Impact of Device Parameter Variation on the Electrical Characteristic of N-type Junctionless Nanowire Transistor with High-k Dielectrics

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