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Correction: All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator

机译：校正：基于PANI / PETA的全解决方案，柔性薄膜晶体管为栅/栅极绝缘子

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Jin-Yong Hong; Kyoung-Hwan Shin; Dai Gun Yoon; Byung Doo Chin; Sung Hyun Kim;
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1. Correction: All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator [J] . Jin-Yong Hong, Kyoung-Hwan Shin, Dai Gun Yoon, RSC Advances . 2019,第7期

机译：校正：基于PANI / PETA作为栅极/栅极绝缘体的全溶液处理的柔性薄膜晶体管
2. All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator (vol 5, pg 105785, 2015) [J] . Hong Jin-Yong, Shin Kyoung-Hwan, Yoon Dai Gun, RSC Advances . 2019,第7期

机译：基于PANI / PETA的全解决方案，柔性薄膜晶体管为栅极/栅极绝缘体（Vol 5，PG 105785,2015）
3. All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator [J] . Hong Jin-Yong, Yoon Dai Gun, Chin Byung Doo, RSC Advances . 2015,第128期

机译：基于PANI / PETA作为栅极/栅极绝缘体的全溶液处理的柔性薄膜晶体管
4. Low-temperature processed and self-aligned InGaZnO thin-film transistor with an organic gate insulator for flexible devices [C] . M. Furuta, T. Toda, G. Tatsuoka, Symposium on Thin Film Transistor Technologies . 2016

机译：低温处理和自对准InGazno薄膜晶体管，具有用于柔性装置的有机栅极绝缘体
5. Low-voltage Organic Thin Film Transistors Based on High -k Gate Insulators [D] . Li, Jinhua 2012

机译：基于高k栅极绝缘体的低压有机薄膜晶体管
6. Stability Study of Flexible 613-Bis(triisopropylsilylethynyl)pentacene Thin-Film Transistors with a Cross-Linked Poly(4-vinylphenol)/Yttrium Oxide Nanocomposite Gate Insulator [O] . Jin-Hyuk Kwon, Xue Zhang, Shang Hao Piao, 2016

机译：带有交联聚（4-乙烯基苯酚）/氧化钇纳米复合栅极绝缘子的柔性613-双（三异丙基甲硅烷基乙炔基）并五苯薄膜晶体管的稳定性研究
7. Stability Study of Flexible 6,13-Bis(triisopropylsilylethynyl)pentacene Thin-Film Transistors with a Cross-Linked Poly(4-vinylphenol)/Yttrium Oxide Nanocomposite Gate Insulator [O] . Jin-Hyuk Kwon, Xue Zhang, Shang Hao Piao, 2016

机译：具有交联聚（4-乙烯基苯酚）/氧化钇纳米复合栅绝缘子的柔性6,13-双（三异丙基甲硅烷基乙炔基）并五苯薄膜晶体管的稳定性研究

Correction: All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator

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