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Etching processes of transferred and non-transferred multi-layer graphene in the presence of extreme UV, H2O and H2

机译：在极端UV，H2O和H2存在下转移和非转移多层石墨烯的蚀刻过程

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B.K. Mund; J.M. Sturm; W.T.E. van den Beld; C.J. Lee; F. Bijkerk;
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1. Etching processes of transferred and non-transferred multi-layer graphene in the presence of extreme UV, H_2O and H_2 [J] . Applied Surface Science . 2020,第Feba28期

机译：极端UV，H_2O和H_2存在下转移和未转移的多层石墨烯的蚀刻过程
2. Degradation of melatonin by UV, UV/H2O2, Fe~(2+)/H2O2 and UV/Fe~(2+)/H2O2 processes [J] . Xiang-Rong Xu, Xiao-Yan Li, Xiang-Zhong Li Separation and Purification Technology . 2009,第2期

机译：UV，UV / H2O2，Fe〜（2 +）/ H2O2和UV / Fe〜（2 +）/ H2O2工艺对褪黑激素的降解
3. Effect of system parameters and of inorganic salts on the decolorization and degradation of Procion H-exl dyes.Comparison of H2O2/UV,Fenton,UV/Fenton,TiO2/UV and TiO2/UV/H2O2 processes [J] . A.Riga, K.Soutsas, K.Ntampegliotis Desalination: The International Journal on the Science and Technology of Desalting and Water Purification . 2007,第1a3期

机译：系统参数和无机盐对Procion H-exl染料的脱色和降解的影响。H2O2/ UV，Fenton，UV / Fenton，TiO2 / UV和TiO2 / UV / H2O2工艺的比较
4. Comparison of the Efficiency of OH Radical Formation during Ozonation and the Advanced Oxidation Processes O3/H2O2 and UV/H2O2 [C] . Erik J. Rosenfeldt, Karl G. Linden, Silvio Canonica World Congress on Ozone and Ultraviolet Technologies . 2007

机译：臭氧处理期间OH自由基形成效率的比较和晚期氧化方法O3 / H2O2和UV / H2O2
5. Ash Sintering in the Presence of a CO2-H2O Vapor [D] . Hoxsie, Erin Colleen. 2018

机译：在CO2-H2O蒸气存在下的灰烬烧结
6. Comparison of UV-induced AOPs (UV/Cl2 UV/NH2Cl UV/ClO2 and UV/H2O2) in the degradation of iopamidol: Kinetics energy requirements and DBPs-related toxicity in sequential disinfection processes [O] . Fu-Xiang Tian, Wen-Kai Ye, Bin Xu, -1

机译：紫外线在碘帕醇降解中诱导的AOPs（UV / Cl2UV / NH2ClUV / ClO2和UV / H2O2）的比较：动力学能量需求和与DBPs相关的顺序消毒过程中的毒性
7. Degradation and Microbiological Validation of Meropenem Antibiotic in Aqueous Solution Using UV, UV/H2O2, UV/TiO2 and UV/TiO2/H2O2 Processes. [O] . Priyanshu Verma, Jatinder Kumar 2014

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8. Profile and Groove-Depth Control in GaAs Diffraction Gratings Fabricated by Preferential Chemical Etching in H2SO4-H2O2-H2O System. [R] . Tsang, W. T., Wang, S. 1975

机译：H2sO4-H2O2-H2O体系中优先化学蚀刻制备Gaas衍射光栅的轮廓和凹槽深度控制。

Etching processes of transferred and non-transferred multi-layer graphene in the presence of extreme UV, H2O and H2

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