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Self-Aligned Capillary-Assisted Printing of Bottom-Gate Electrolyte-Gated Transistors on Plastic

机译：自对准毛细管辅助印刷塑料上的底栅电解质门控晶体管

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1. Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer [J] . Lee Sol Kyu, Seok Ki Hwan, Chae Hee Jae, Solid-State Electronics . 2017,第MARa期

机译：具有自对准轻掺杂层的硅化镍晶种引起的横向结晶的底栅多晶硅薄膜晶体管
2. Self-Aligned Bottom-Gate In—Ga—Zn—O Thin-Film Transistor With Source/Drain Regions Formed by Direct Deposition of Fluorinated Silicon Nitride [J] . Jiang J., Furuta M., Wang D. Electron Device Letters, IEEE . 2014,第9期

机译：自对准底栅In-Ga-Zn-O薄膜晶体管，其源/漏区由氟化氮化硅的直接沉积形成
3. Fabrication method for self-aligned bottom-gate oxide thin-film transistors by utilizing backside excimer-laser irradiation through substrate [J] . Nakata Mitsuru, Tsuji Hiroshi, Fujisaki Yoshihide, Applied Physics Letters . 2013,第14期

机译：利用背面受激准分子激光穿透基板的自对准底栅氧化物薄膜晶体管的制造方法
4. Self-Aligned Bottom-Gate InGaZnO Thin-Film Transistor with Source and Drain Regions Formed by Selective Deposition of Fluorinated SiNx Passivation [C] . Mamoru Furuta, Jingxin Jiang, Gengo Tatsuoka, Thin film transistors 12 . 2014

机译：自对准底栅InGaZnO薄膜晶体管，其源极和漏极区由选择性沉积氟化SiNx钝化形成
5. Towards flexible full-color active matrix organic light-emitting displays: Dry dye printing for OLED integration and 280°C amorphous-silicon thin-film transistors on clear plastic substrates. [D] . Long, Ke. 2006

机译：迈向柔性全色有源矩阵有机发光显示器：用于透明OLED集成的干式染料印刷和在透明塑料基板上的280°C非晶硅薄膜晶体管。
6. Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors [O] . Sungju Choi, Jae-Young Kim, Hara Kang, 2019

机译：氧含量对底栅非晶InGaZnO薄膜晶体管电流应力诱导的不稳定性的影响
7. Organic Transistors: Self-Aligned Megahertz Organic Transistors Solution-Processed on Plastic (Adv. Electron. Mater. 5/2015) [O] . Stuart G. Higgins, Beinn V. O. Muir, Jessica Wade, 2015

机译：有机晶体管：自对准的兆赫有机晶体管 - 在塑料上加工（ADV。电子。Matter。5/2015）

Self-Aligned Capillary-Assisted Printing of Bottom-Gate Electrolyte-Gated Transistors on Plastic

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