Nanometer-scale studies of Al–Ga interdiffusion and As precipitate coarsening in nonstoichiometric AlAs/GaAs superlattices

摘要

We have investigated the effects of post-growth annealing on Al–Ga interdiffusion and As precipitate coarsening in AlAs/GaAs superlattices grown by molecular-beam epitaxy at low temperatures. High-resolution x-ray diffraction spectra show a significant decrease in the number and intensity of satellite peaks for the ex situ annealed compared with the as-grown superlattices, a feature which is often attributed to a reduction in interface abruptness. However, our cross-sectional scanning tunneling microscopy images show significant variation in the apparent superlattice period of the ex situ annealed compared with the as-grown superlattices. For the as-grown superlattices, preferential As precipitation on the GaAs side of AlAs/GaAs interfaces is evident. In the ex situ annealed superlattices, a preference for As precipitates at the GaAs on AlAs interface is apparent, although the As precipitates are no longer restricted to the interface region. Thus, the apparent change in superlattice period is likely due to variations in As precipitate density, which may be influenced by AlAs–GaAs alloying at the AlAs/GaAs interfaces. © 1999 American Institute of Physics.