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Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

机译：具有高浇口和多嵌入缓冲器的新型高能效AlGaN / GaN Hemt

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Shunwei Zhu; Hujun Jia; Tao Li; Yibo Tong; Yuan Liang; Xingyu Wang; Tonghui Zeng; Yintang Yang;
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1. Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer [J] . Mei Ge, Qing Cai, Bao-Hua Zhang, 中国物理：英文版 . 2019,第010期

机译：p-GaN栅极AlGaN / GaN HEMT中无意识掺杂的GaN缓冲层中的陷阱引起的负跨导效应
2. Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p-GaN Gate AlGaN/GaN HEMTs [J] . Mei Ge, Qing Cai, Baohua Zhang, Physica status solidi . 2018,第2期

机译：无意识掺杂的GaN缓冲层中陷阱水平对优化的p-GaN栅极AlGaN / GaN HEMT的影响
3. Simulation design of a high-breakdown-voltage p-GaN-gate GaN HEMT with a hybrid AlGaN buffer layer for power electronics applications [J] . Yong Liu, Qi Yu, Jiangfeng Du Journal of Computational Electronics . 2020,第4期

机译：用于电力电子应用的Hybrid Algan缓冲层的高击穿电压P-Gan-Gate GaN HEMT的仿真设计
4. Comparison of side-gate modulation responses for AlGaN/GaN HEMTs on GaN substrates with and without C-doped GaN buffer layer [C] . Maria Emma Villamin, Naotaka Iwata 応用物理学会春季学術講演会;応用物理学会 . -1

机译：GaN衬底与无C掺杂GaN缓冲层的GaN衬底侧栅调制响应的比较
5. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016

机译：研究常关模式的AlGaN / GaN MOS HEMT器件，该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
6. Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer [O] . Shunwei Zhu, Hujun Jia, Tao Li, 2015

机译：具有高栅极和多凹槽缓冲器的新型高能效AlGaN / GaN HEMT
7. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by pulsed I-V and low frequency noise measurements [O] . Karboyan Serge, Tartarin Jean-Guy, Rzin M, 2013

机译：栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明，栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明
8. Self-Aligned ALD AlOx T-gate Insulator for Gate Leakage Current Suppression in SiNx-Passivated AlGaN/GaN HEMTs [R] . 2010

机译：自对准aLD alOx T栅极绝缘体，用于siNx钝化alGaN / GaN HEmT中的栅极漏电流抑制

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

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