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High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor

机译：高性能排水工程ingaN异质结构隧道场效应晶体管

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Xiaoling Duan; Jincheng Zhang; Jiabo Chen; Tao Zhang; Jiaduo Zhu; Zhiyu Lin; Yue Hao;
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1. High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor [J] . Xiaoling Duan, Jincheng Zhang, Jiabo Chen, Micromachines . 2019,第1期

机译：高性能漏极工程InGaN异质结构隧道场效应晶体管
2. Effect of graded InGaN drain region and 'In' fraction in InGaN channel on performances of InGaN tunnel field-effect transistor [J] . Xiaoling Duan, Jincheng Zhang, Shulong Wang, Superlattices and microstructures . 2017,第deca期

机译：InGaN沟道中渐变的InGaN漏极区和'In'分数对InGaN隧道场效应晶体管性能的影响
3. Compact 2D modeling and drain current performance analysis of a work function engineered double gate tunnel field effect transistor [J] . Sarkhel Saheli, Bagga Navjeet, Sarkar Subir Kumar Journal of Computational Electronics . 2016,第1期

机译：功函数工程双栅极隧道场效应晶体管的紧凑型2D建模和漏极电流性能分析
4. Impact of spacer-drain workfunction engineered on the characteristics of a Si-Ge dopingless tunnel field effect transistor with lower subthreshold swing [C] . Sudakar S. Chauhan, Neha Sharma, Raja Naik IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology . 2017

机译：设计的隔层-漏极功函数对具有较低亚阈值摆幅的Si-Ge无掺杂隧道场效应晶体管的特性的影响
5. Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors [D] . Zhu, Yan. 2014

机译：低功率隧道场效应晶体管的混合As / Sb和拉伸应变的Ge / InGaAs异质结构
6. High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor [O] . Xiaoling Duan, Jincheng Zhang, Jiabo Chen, 2019

机译：高性能漏极工程InGaN异质结构隧道场效应晶体管
7. Ferroelectric-driven performance enhancement of graphene field-effect transistors based on vertical tunneling heterostructures [O] . Yuan S, Yang Z, Xie C, 2016

机译：基于垂直隧穿异质结构的石墨烯场效应晶体管的铁电驱动性能增强
8. Numerical Simulation of the Comparative Electrical Performance of the PermeableBase Transistor, Opposed Gate-Source Transistor and Heterostructure Launched Ballistic Field Effect Transistor [R] . Grubin, H. L., Kreskovsky, J. P., Meyyappan, M., 1990

机译：透水基三极管，对置栅 - 源晶体管和异质结构发射弹道场效应晶体管比较电性能的数值模拟

High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor

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