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Band Engineering of Carbon Nitride Monolayers by N-Type, P-Type, and Isoelectronic Doping for Photocatalytic Applications

机译：用n型，p型和异形掺杂碳氮化物单层的带工程，用于光催化应用

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Meysam Makaremi; Sean Grixti; Keith T. Butler; Geoffrey A. Ozin; Chandra Veer Singh;
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年度 2018
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1. Band Engineering of Carbon Nitride Monolayers by N-Type, P-Type, and Isoelectronic Doping for Photocatalytic Applications [J] . Makaremi Meysam, Grixti Sean, Buter Keith T., ACS applied materials & interfaces . 2018,第13期

机译：用n型，p型和光催化应用的氮化物单层碳氮化物单层的带工程
2. Engineering nanoscale p-n junction via the synergetic dual-doping of p-type boron-doped graphene hybridized with n-type oxygen-doped carbon nitride for enhanced photocatalytic hydrogen evolution [J] . Putri Lutfi Kurnianditia, Ng Boon-Junn, Ong Wee-Jun, Journal of Materials Chemistry, A. Materials for energy and sustainability . 2018,第7期

机译：通过用n型氧掺杂氮化物杂交的P型硼掺杂石墨烯的协同双掺杂来实现纳米级P-N结，以增强光催化氢气进化
3. Work function engineering of ZnO electrodes by using p-type and n-type doped carbon nanotubes [J] . Urbina A., Park J.S., Lee J.M., Nanotechnology . 2013,第48期

机译：使用p型和n型掺杂碳纳米管的ZnO电极的功函数工程
4. Nitrogen gas flow driven voltage production of self assembled monolayer coated doped p-type and n-type silicon wafers [C] . Devaprakasam D., Prakash P., Guganesan R., International Conference on Current Trends in Engineering and Technology . 2013

机译：自组装单层涂覆的掺杂p型和n型硅晶片的氮气流驱动电压生产
5. The luminescence properties of the wide bandgap nitrides doped with rare earth ions and gallium nitride doped with conventional isoelectronic impurities. [D] . Jadwisienczak, Wojciech M. 2001

机译：掺杂有稀土离子的宽带隙氮化物和掺杂有常规等电子杂质的氮化镓的发光特性。
6. Engineering Electronic Structure and Band Alignment of 2D Mg(OH)2 via Anion Doping for Photocatalytic Applications [O] . Shunnian Wu, Hasanthi L. Senevirathna, P. Vishakha T. Weerasinghe, 2021

机译：通过阴离子掺杂进行光催化应用的工程电子结构和2D mg（OH）2的带对准
7. Simultaneously engineering K-doping and exfoliation into graphitic carbon nitride (g-C3N4) for enhanced photocatalytic hydrogen production [O] . Shaodong Sun, Jia Li, Jie Cui, 2019

机译：同时将k掺杂和剥离成石墨氮化物（G-C3N4），用于增强的光催化氢气产生

Band Engineering of Carbon Nitride Monolayers by N-Type, P-Type, and Isoelectronic Doping for Photocatalytic Applications

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