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K-Band Low Phase Noise VCO Based on Q-Boosted Switched Inductor

机译:基于Q-Boosted开关电感的K波段低相位噪声VCO

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摘要

In this article, the development of the K-band low phase noise voltage-controlled oscillator (VCO) based on Q-boosted switched inductor is presented. Compared with the conventional switched inductor, the eddy current will be decreased using a 2-turn secondary coil, and then the dissipated power from the switch on-resistance will also be decreased, leading to a boosted inductor Q at switch ON-state. The equivalent inductance, quality factor, and self-resonance frequency at switch ON/OFF states are analyzed and derived. For comparison, K-band VCOs have been designed and fabricated in a 130nm BiCMOS process with the Q-boosted and conventional switched inductors. Measured results show that the phase noise has been typically improved by 2−5dB at 100 kHz and 1 MHz offset at switch ON-state, using the Q-boosted switched inductor.
机译:在本文中,提出了基于Q升压开关电感的K波段低相位噪声控制振荡器(VCO)。与传统的开关电感器相比,使用2转次级线圈将减小涡电流,然后还将降低来自开关导通电阻的耗散功率,导致接通状态下的升压电感器Q。分析和导出开关开/关的等效电感,质量因子和自共振频率。为了比较,K场VCOS已经在130nm BICMOS工艺中设计和制造,具有Q升压和传统的开关电感器。测量结果表明,使用Q升压开关电感器,相位噪声在开关导通状态下在100kHz和1MHz的偏移中通常在100kHz和1MHz偏移中提高2-5dB。

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