首页> 外文OA文献 >Characterization of Silver Saturated-Ge45Te55Solid Electrolyte Films Incorporated by Nitrogen for Programmable Metallization Cell Memory Device

【2h】

Characterization of Silver Saturated-Ge45Te55Solid Electrolyte Films Incorporated by Nitrogen for Programmable Metallization Cell Memory Device

机译：用于可编程金属化电池存储装置的氮气掺入银饱和-GE45T555555Solid电解质膜的表征

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Soo-Jin Lee; Soon-Gil Yoon; Sung-Min Yoon; Byoung-Gon Yu;
展开▼
作者单位

展开▼
年度 2007
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Switching characteristics of copper-doped GexTe1?x solid electrolyte films incorporated by nitrogen for programmable metallization cell memory applications [J] . Soo-Jin Lee, Jun-Ku Ahn, Sung-Min Yoon, Metals and Materials International . 2008,第4期

机译：用于可编程金属化单元存储应用的氮掺杂铜掺杂Gex Te1xx 固体电解质薄膜的开关特性
2. Switching Characteristics of Copper-Doped Ge_xTe_(1-x) Solid Electrolyte Films Incorporated by Nitrogen for Programmable Metallization Cell Memory Applications [J] . Soo-Jin Lee, Jun-Ku Ahn, Sung-Min Yoon Metals and Materials International . 2008,第4期

机译：氮掺入掺杂铜的Ge_xTe_（1-x）固体电解质膜在可编程金属化存储应用中的开关特性
3. Characterization of in situ diffusion of silver in Ge-Te amorphous films for programmable metallization cell memory applications [J] . Soo-Jin Lee, Soon-Gil Yoon, Kyu-Jeong Choi, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2006,第5期

机译：用于可编程金属化单元存储应用的Ge-Te非晶膜中银的原位扩散特性
4. Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiOx/SiO2 solid electrolytes [C] . Jer-Chyi Wang, Chun-Hsiang Chiu, Ya-Ting Chan, International Symposium on the Physical and Failure Analysis of Integrated Circuits . 2015

机译：叠层SiO x / SiO 2 固体电解质的银可编程金属化电池电阻转换的电流顺从性分析
5. Highly-scaled programmable metallization cell (PMC) memory devices. [D] . Park, Mira. 2005

机译：大规模可编程金属化单元（PMC）存储设备。
6. Photoluminescence characterization of polythiophene films incorporated with highly functional molecules such as metallophthalocyanine [O] . Hiroaki Kobe, Kazumasa Ohnaka, Hitoshi Kato, -1

机译：聚噻吩薄膜与高功能分子（如金属酞菁）的光致发光特性
7. Investigation of high-K dielectric films incorporated with Lanthanum and their application in flash memory devices [O] . HE WEI 2010

机译：掺镧的高K介电薄膜及其在闪存设备中的应用研究
8. Intermediate Temperature Polymer Electrolyte Incorporated With Polyoxometalates For Fuel Cell Applications [R] . Rong, C. , Jiang, R. , Belenky, L. , 2004

机译：中温聚合物电解质与多金属氧酸盐结合用于燃料电池应用

Characterization of Silver Saturated-Ge45Te55Solid Electrolyte Films Incorporated by Nitrogen for Programmable Metallization Cell Memory Device

著录项

引文网络

相似文献

相关主题

期刊订阅