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Correction to Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2

机译：诸如悬浮单层MOS2中具有UltraRarge双轴菌株的带隙工程的校正

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David Lloyd; Xinghui Liu; Jason W. Christopher; Lauren Cantley; Anubhav Wadehra; Brian L. Kim; Bennett B. Goldberg; Anna K. Swan; J. Scott Bunch;
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1. Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2 (vol 16, pg 5836, 2016) [J] . Lloyd David, Liu Xinghui, Christopher Jason W., Nano letters . 2019,第10期

机译：悬浮单层MOS2中具有UltraLarge双轴菌株的带隙工程（Vol 16，PG 5836,2016）
2. Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2 [J] . Lloyd David, Liu Xinghui, Christopher Jason W., Nano letters . 2016,第9期

机译：悬浮单层MoS2中超大双轴应变的带隙工程
3. Bandgap engineering of MoS2/MX2 (MX2 = WS2, MoSe2 and WSe2) heterobilayers subjected to biaxial strain and normal compressive strain [J] . Su Xiangying, Ju Weiwei, Zhang Ruizhi, RSC Advances . 2016,第22期

机译：MOS2 / MX2（MX2 = WS2，MOSE2和WSE2）的带隙工程，经受双轴应变和正常压缩菌株的异质层
4. Local strain engineering in monolayer MoS2 [C] . Wataru Tomita, Katsushi Hashimoto, Ziqian Wang, 2016 Compound Semiconductor Week Includes 28th International Conference on Indium Phosphide amp; Related Materials amp; 43rd International Symposium on Compound Semiconductors . 2016

机译：单层MoS2中的局部应变工程
5. The study of band gap engineering for phononic crystals and gap structures in phononic quasicrystals. [D] . Lai, Yun. 2005

机译：声子晶体的带隙工程和声子准晶体的能隙结构研究。
6. Enhanced Shift Currents in Monolayer 2D GeS and SnSby Strain-Induced Band Gap Engineering [O] . NgeywoTolbert Kaner, Yadong Wei, Yingjie Jiang, 2020

机译：单层2D GeS和SnS中增强的移位电流通过应变诱导带隙工程
7. Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2 [O] . Lloyd, David, Liu, Xinghui, Christopher, Jason W., 2016

机译：悬臂梁中超大双轴应变的带隙工程单层mos2

Correction to Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2

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