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Multi-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky Diode

机译：TI / W 4H-SIC肖特基二极管的多屏障高度表征和DLTS研究

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Teng Zhang; Christophe Raynaud; Dominique Planson;
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1. Multi-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky Diode [J] . Teng Zhang, Christophe Raynaud, Dominique Planson Materials science forum . 2019,第期

机译：TI / W 4H-SIC肖特基二极管的多屏障高度表征和DLTS研究
2. Deep Level Transient Spectroscopy (DLTS) Study of 4H-SiC Schottky Diodes and PiN Diodes [J] . Xiang Zhou, Gyanesh Pandey, Reza Ghandi, Materials science forum . 2019,第期

机译：深度瞬态光谱（DLTS）研究4H-SIC肖特基二极管和PIN二极管的研究
3. Post-annealing processes to improve inhomogeneity of Schottky barrier height in Ti/Al 4H-SiC Schottky barrier diode [J] . Kyoung Sinsu, Jung Eun-Sik, Sung Man Young Microelectronic Engineering . 2016,第mara期

机译：后退火工艺可改善Ti / Al 4H-SiC肖特基势垒二极管中肖特基势垒高度的不均匀性
4. Multi-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky Diode [C] . Teng ZHANG, Christophe Raynaud, Dominique Planson European Conference on Silicon Carbide and Related Materials . 2019

机译：TI / W 4H-SIC肖特基二极管的多屏障高度表征和DLTS研究
5. Defect Characterization of 4H-SiC by Deep Level Transient Spectroscopy (DLTS) and Influence of Defects on Device Performance [D] . Mannan, Mohammad Abdul 2015

机译：用深层瞬态光谱法（DLTS）表征4H-SiC的缺陷及其对器件性能的影响
6. The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2 [O] . Lin-Yue Liu, Ling Wang, Peng Jin, 2017

机译：Ni / 4H-SiC肖特基二极管辐射探测器的制造与表征其敏感面积高达4 cm2
7. The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes [O] . Meyer, W.E. (Walter Ernst), Omotoso, Ezekiel, Auret, F.D. (Francois Danie), 2015

机译：高能电子辐照对肖特基势垒高度和Ni / 4H-siC肖特基二极管的Richardson常数的影响
8. Carbon nanotube Schottky diodes using Ti-Schottky and Pt-ohmic contacts for high frequency applications [R] . Manohara, Harish M., Wong, Eric W., Schlecht, Erich, 2005

机译：碳纳米管肖特基二极管，采用Ti-schottky和pt欧姆触点，适用于高频应用

Multi-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky Diode

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