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Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

机译：自上而下的GaN纳米线晶体管，具有几乎零栅极滞后的平行垂直电子器件

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Muhammad Fahlesa Fatahilah; Feng Yu; Klaas Strempel; Friedhard Römer; Dario Maradan; Matteo Meneghini; Andrey Bakin; Frank Hohls; Hans Werner Schumacher; Bernd Witzigmann; Andreas Waag; Hutomo Suryo Wasisto;
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1. Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics [J] . Muhammad Fahlesa Fatahilah, Feng Yu, Klaas Strempel, Scientific reports. . 2019,第1期

机译：自上而下的GaN纳米线晶体管，具有几乎零栅极滞后的平行垂直电子器件
2. Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach [J] . Liao Yaqiang, Chen Tao, Wang Jia, Japanese journal of applied physics . 2021,第7期

机译：通过自上而下的制造方法垂直的GaN-On-GaN纳米线肖特基屏障二极管
3. Interface Passivation and Trap Reduction via a Solution-Based Method for Near-Zero Hysteresis Nanowire Field-Effect Transistors [J] . Constantinou Marios, Stolojan Vlad, Rajeev Kiron Prabha, ACS applied materials & interfaces . 2015,第40期

机译：通过基于溶液的近零磁滞纳米线场效应晶体管的界面钝化和陷阱减少
4. Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors with Reduced Vertical Nanowires Separation, New Work Function Metal Gate Solutions, and DC/AC Performance Optimization [C] . R. Ritzenthaler, H. Mertens, V. Pena, IEEE International Electron Devices Meeting . 2018

机译：垂直堆叠栅全能Si纳米线CMOS晶体管，减少了垂直纳米线的分离，提供了新的功函数金属栅极解决方案，并且优化了DC / AC性能
5. Nanowire-based devices for electronic and optical applications: Solution-gated silicon nanowire field effect transistors and one-dimensional gold nanoparticle arrays [D] . Hu, Wenchong 2010

机译：用于电子和光学应用的基于纳米线的设备：溶液门控硅纳米线场效应晶体管和一维金纳米粒子阵列
6. Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics [O] . Muhammad Fahlesa Fatahilah, Feng Yu, Klaas Strempel, -1

机译：自上而下的GaN纳米线晶体管具有几乎为零的栅极迟滞可用于平行垂直电子设备
7. Interface Passivation and Trap Reduction via a Solution-Based Method for Near-Zero Hysteresis Nanowire Field-Effect Transistors [O] . Constantinou, M, Stolojan, V, Rajeev, KP, 2015

机译：通过基于溶液的近零磁滞纳米线场效应晶体管的界面钝化和陷阱减少
8. GaN Power Electronics: From GaN-on-Si Lateral Transistor to GaN-on-GaN Vertical Transistor and GaN CMOS IC. [R] . Chu, R., Cao, Y., Li, R., 2017

机译：GaN功率电子器件：从GaN-on-si横向晶体管到GaN-on-GaN垂直晶体管和GaN CmOs IC。

Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

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