首页> 外文OA文献 >Free carrier induced spectral shift for GaAs filled metallic hole arrays

【2h】

Free carrier induced spectral shift for GaAs filled metallic hole arrays

机译：免费载体诱导GaAs填充金属孔阵列的光谱转换

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Jingyu Zhang; Bin Xiang; Mansoor Sheik-Bahae; S. R. J. Brueck;
展开▼
作者单位

展开▼
年度 2012
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Saturation of the second harmonic generation from GaAs-filled metallic hole arrays by nonlinear absorption [J] . Jingyu Zhang, Li Wang, Sanjay Krishna, Physical review . 2011,第16期

机译：GaAs填充金属孔阵列通过非线性吸收饱和产生第二谐波
2. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.0–1.2 μm due to increased charge carrier's localization [J] . Kryzhkov D.I., Yablonsky A.N., Morozov S.V., Journal of Applied Physics . 2014,第20期

机译：基于GaAsSb / InGaAs / GaAs的异质结构在1.0-1.2μm光谱范围内发射的长波移和增强的室温光致发光效率
3. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.0-1.2μm due to increased charge carrier's localization [J] . D. I. Kryzhkov, A. N. Yablonsky, S. V. Morozov, Journal of Applied Physics . 2014,第20期

机译：GaAsSb / InGaAs / GaAs基异质结构在1.0-1.2μm光谱范围内发射的长波移和增强的室温光致发光效率是由于电荷载流子的定位增加
4. Guided-wave GaAs/AlGaAs FET optical modulator based on free-carrier-induced bleaching [C] . Abeles J.H., Chan W.K., Kastalsky A., Electron Devices Meeting, 1987 International . -1

机译：基于自由载流子漂白的导波GaAs / AlGaAs FET光学调制器
5. Particle dynamics and energy transfer in high-speed quantum well lasers: Effects of spectral hole burning, carrier heating, and carrier transport [D] . Tsai, Chin-Yi. 1995

机译：高速量子井激光器中的粒子动力学和能量转移：光谱燃烧，载体加热和载流子的效果
6. High conductivity Ag-based metal organic complexes as dopant-free hole-transport materials for perovskite solar cells with high fill factors [O] . Yong Hua, Bo Xu, Peng Liu, 2016

机译：高导电率的基于Ag的金属有机配合物作为高掺杂系数钙钛矿型太阳能电池的无掺杂空穴传输材料
7. Interference induced metallic-like behavior of a two-dimensional hole gas in asymmetric GaAs/In$_{x}$Ga$_{1-x}$As/GaAs quantum well [O] . Minkov, G. M., Germanenko, A. V., Sherstobitov, A. A., 2007

机译：干涉引起二维孔的金属样行为不对称Gaas中的气体/ In $ _ {x} $ Ga $ _ {1-x} $ as / Gaas量子阱
8. Free Carrier Induced Spectral Shift for GaAs Filled Metallic Hole Arrays. [R] . Zhang, J., Xiang, B., Sheik-Bahae, M., 2012

机译：Gaas填充金属孔阵列的自由载流子诱导谱移。

Free carrier induced spectral shift for GaAs filled metallic hole arrays

著录项

引文网络

相似文献

相关主题

期刊订阅