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Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes

机译:N型单晶ZnO PhotoNode的光电化学稳定性和改变产物

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摘要

The photoelectrochemical stability and surface-alteration characteristics of doped and undoped n-type ZnO single-crystal photoanode electrodes were investigated. The single-crystal ZnO photoanode properties were analyzed using current-voltage measurements plus spectral and time-dependent quantum-yield methods. These measurements revealed a distinct anodic peak and an accompanying cathodic surface degradation process at negative potentials. The features of this peak depended on time and the NaOH concentration in the electrolyte, but were independent of the presence of electrode illumination. Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with the significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. The resulting Zn-metal reaction products create unusual, dendrite-like, surface alteration structural features that were analyzed using x-ray diffraction, energy-dispersive analysis, and scanning electron microscopy. ZnO doping methods were found to be effective in increasing the n-type character of the crystals. Higher doping levels result in smaller depletion widths and lower quantum yields, since the minority carrier diffusion lengths are very short in these materials.
机译:研究了掺杂和未掺杂的N型ZnO单晶光电码电极的光电化学稳定性和表面改变特性。使用电流 - 电压测量加上光谱和时间依赖量子产量方法分析单晶ZnO PhotoNode属性。这些测量显示了在负电位下的不同阳极峰值和伴随的阴极表面劣化过程。该峰的特征依赖于电解质中的时间和NaOH浓度,但与电极照明的存在无关。在峰值上执行的电流测量表明在半导体/电解质界面处显然发生充电和放电效果。该结果与在ZnO单晶光阳极表面上发生的显着反应性降解一致,最终导致ZnO表面的减少到Zn金属。得到的Zn-金属反应产物采用X射线衍射,能量分散分析和扫描电子显微镜进行了不寻常的,枝晶状的表面改变结构特征。发现ZnO掺杂方法有效地增加晶体的n型特征。较高的掺杂水平导致较小的耗尽宽度和较低量子产率,因为这些材料中的少数载体扩散长度非常短。

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