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Photovoltaic Cells Employing Group II-VI Compound Semiconductor Active Layers: Cooperative Research and Development Final Report, CRADA Number CRD-09-325

机译：采用II-VI族化合物半导体活性层的光伏电池：合作研发最终报告，CRADA号码CRD-09-325

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Wyatt K Metzger;
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年度 2018
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1. Design of Self-Organized Spinodal Nano-Decomposition for High-Efficiency Photovoltaic Solar Cells in II-VI Compound Semiconductors Alloy [J] . Masamune Oshitani, Kazuhiro Sato, Hiroshi Katayama-Yoshida Annales de l'I.H.P . 2011,第2期

机译：II-VI化合物半导体合金中高效光伏太阳能电池自组织旋节线纳米分解的设计
2. Recent developments in II-VI and III-VI semiconductors and their applications in solar cells [J] . Afzaal M, OBrien P Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology . 2006,第17期

机译：II-VI和III-VI半导体的最新发展及其在太阳能电池中的应用
3. Study of the parameters of nanoscale layers in nanoheterostructures based on II-VI semiconductor compounds [J] . Karavaev M. B., Kirilenko D. A., Ivanova E. V., Semiconductors . 2017,第1期

机译：基于II-VI半导体化合物的纳米能结构中纳米级层参数的研究
4. Graded and alloyed II-VI semiconductors for photovoltaic buffer layers grown by atomic layer deposition (ALD) [C] . Bakke J.R. Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE . 2011

机译：用于通过原子层沉积（ALD）生长的光伏缓冲层的分级和合金化II-VI半导体
5. The Mechanical Properties of III-V Compound Semiconductors Used in High Efficiency Multijunction Photovoltaic Cells [D] . Zakaria, Abdallah 2011

机译：高效多结光伏电池中使用的III-V型化合物半导体的机械性能
6. Enhanced Photovoltaic Properties of Perovskite Solar Cells by Employing Bathocuproine/Hydrophobic Polymer Films as Hole-Blocking/Electron-Transporting Interfacial Layers [O] . Guan-Zhi Liu, Chi-Shiuan Du, Jeng-Yue Wu, 2021

机译：通过使用浴缸/疏水聚合物膜作为空穴阻挡/电子输送界面层来增强钙钛矿太阳能电池的光伏性能
7. Development of a High Volume Capable Process to Manufacture High Performance Photovoltaic Cells: Cooperative Research and Development Final Report, CRADA Number CRD-08-322 [O] . Geisz, J. F. 2012

机译：开发高容量光伏电池的高容量工艺：合作研究和开发最终报告，CRaDa编号CRD-08-322

Photovoltaic Cells Employing Group II-VI Compound Semiconductor Active Layers: Cooperative Research and Development Final Report, CRADA Number CRD-09-325

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