Study of degradation in channel initiated secondary electron injection regime

摘要

This paper analyzes the Channel InitiatedSecondary Electron injection mechanismand the resulting hot-carrier degradationin deep sub-micron n-channel MOSFETs.The correlation between gate (IG) andsubstrate current (IB) has been studied fordifferent values of substrate bias. Stressand charge pumping measurements havebeen carried out to study the degradationunder identical substrate bias and gatecurrent conditions. Results show that underidentical gate current (programming timefor flash memory cells), the degradation isless for higher negative substrate bias.