Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics

摘要

In this study we report for the first time results on neutral electron trap generation in reoxidised nitrided oxide dielectrics under various radiation doses and bias conditions and compare the results with the conventional oxides. We see very little electron trap creation in RNO dielectrics for radiation doses up to 5 Mrad (Si) and for bias fields up to ±2.5 MV/cm. We explain our results in RNO and oxide dielectrics using a three step defect creation model.