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Comparative Performance and Reliability Analysis of Doping and Junction Free Devices with High-κ/Vacuum Gate Dielectric

机译：高κ/真空栅极电介质掺杂和接线装置的比较性能及可靠性分析

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Rakesh Kumar; Meena Panchore; Lokesh Kumar Bramhane;
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年度 2021
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1. Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-$k$ PMOS Application [J] . Lee B., Lichtenwalner D. J., Novak S. R., Electron Devices, IEEE Transactions on . 2011,第9期

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2. TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance [J] . Tao Han, Hongxia Liu, Shupeng Chen, Coatings . 2020,第3期

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3. Comparative Study of Device Performance and Reliability in Amorphous InGaZnO Thin-Film Transistors with Various High-k Gate Dielectrics [J] . In-Kyu Lee, Se-Won Lee, Ja-gyeong Gu, Japanese journal of applied physics . 2013,第6issue2期

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4. Study of Temperature Sensitivity on Linearity Figures of Merit of Ge/Si Hetero-Junction Gate-Drain Underlapped Vertical Tunnel FET with heterogeneous gate dielectric structure for Improving Device Reliability [C] . Manas Ranjan Tripathy, Ashish Kumar Singh, Kamalaksha Baral, URSI Regional Conference on Radio Science . 2020

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5. Breakdown and reliability of CMOS devices with stacked oxide/nitride and oxynitride gate dielectrics prepared by RPECVD. [D] . Lee, Yi-Mu. 2003

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7. Natural radioactivity consideration for high-κ dielectrics and metal gates choice in nanoelectronic devices [O] . Michael Gedion, Frédéric Wrobel, Frédéric Saigné 2010

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8. Device Performance and Reliability Improvements of AlGaN/GaN/Si MOSFET Using Defect-Free Gate Recess and Laser Annealing. [R] . Wallace, R. M. 2015

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Comparative Performance and Reliability Analysis of Doping and Junction Free Devices with High-κ/Vacuum Gate Dielectric

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