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Performance and reliability of single halo deep sub-micron p-MOSFETs for analog applications

机译：用于模拟应用的单光晕深亚微米p-MOSFET的性能和可靠性

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摘要

The effect of channel hot carrier (CHC) stress under typical analog operating conditions is studied for the first time for single halo (SH) p-MOSFET devices. The SH devices show less degradation under identical operating conditions compared to conventional MOSFETs. The effect of SH implant parameters on device degradation is presented.

机译：对于单光环（SH）p-MOSFET器件，首次研究了典型模拟工作条件下的沟道热载流子（CHC）应力的影响。与常规MOSFET相比，SH器件在相同的工作条件下显示出较少的退化。提出了SH植入物参数对器件降解的影响。

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JHA NK; BAGHINI MS; RAMGOPAL RAO V;
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年度 2002
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正文语种 eng
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专利

1. Superior hot carrier reliability of single halo (SH) silicon-on-insulator (SOI) nMOSFET in analog applications [J] . Hakim N., Rao V.R., Vasi J., IEEE transactions on device and materials reliability . 2005,第1期

机译：单环（SH）绝缘体上硅（SOI）nMOSFET在模拟应用中具有出色的热载流子可靠性
2. Deep Sub-Micron Device and Analog Circuit Parameter Sensitivity to Process Variations with Halo Doping and Its Effect on Circuit Linearity [J] . K. NARASIMHULU, V. RAMGOPAL RAO Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第4B期

机译：深亚微米器件和模拟电路参数对光晕掺杂工艺变化的敏感性及其对电路线性的影响
3. Impact of Halo Doping on the Subthreshold Performance of Deep-Submicrometer CMOS Devices and Circuits for Ultralow Power Analog/Mixed-Signal Applications [J] . Saurav Chakraborty, Abhijit Mallik, Chandan Kumar Sarkar, IEEE Transactions on Electron Devices . 2007,第期

机译：晕轮掺杂对超低功耗模拟/混合信号应用中深亚微米CMOS器件和电路的亚阈值性能的影响
4. Performance and reliability of single halo deep sub-micron p-MOSFETs for analog applications [C] . Jha, N.K., Baghini, . 2002

机译：用于模拟应用的单光晕深亚微米p-MOSFET的性能和可靠性
5. Digitally calibrated analog-to-digital converters in deep sub-micron CMOS. [D] . Tsang, Cheongyuen William. 2008

机译：深亚微米CMOS中的数字校准模数转换器。
6. Optimizing the Reliability and Performance of Service Composition Applications with Fault Tolerance in Wireless Sensor Networks [O] . Zhao Wu, Naixue Xiong, Yannong Huang, 2015

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7. Optimization of single halo p-MOSFET implant parameters for improved analog performance and reliability [O] . JHA NK, RAMGOPAL RAO V, WOO JCS 2002

机译：优化单个光晕p-MOSFET注入参数以提高模拟性能和可靠性

Performance and reliability of single halo deep sub-micron p-MOSFETs for analog applications

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