Gate insulator process dependent NBTI in SiON p-MOSFETs

摘要

The material dependence of NBTI in SiON p-MOSFETs is studied using the UF-OTF IDLIN method. It is shown that the N density at the Si/SiON interface plays a very crucial role in determining the magnitude as well as the time, temperature and field dependence of NBTI. The relative contribution of interface trap generation and hole trapping to overall degradation is qualitatively discussed.