Qualitative Simulation of the Growth of Electrolessly Deposited Cu Thin Films

摘要

Electroless deposition for fabricating copper (Cu) interconnects of integratedcircuits has drawn attention due to its low processing temperature,high deposition selectivity, and high coverage. In this paper, three-dimensionalcomputer simulations of the qualitative growth properties of Cuparticles and two-dimensional simulations of the trench-filling properties areconducted. The mathematical model employed in the study is a reaction-diffusionequation. An implicit finite difference discretization with a red-blackGauss-Seidel method as a solver is proposed for solving the reaction-diffusionequation. The simulated deposition properties agree with thoseobserved in experimentation. Alternatives to improve the deposition propertiesare also discussed.